公开(公告)号：US10727408B2

公开(公告)日：2020-07-28

申请号：US16195765

申请日：2018-11-19

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Lucian Shifren

IPC: H01L21/20 ,  H01L27/02 ,  H01L49/00 ,  H01L45/00 ,  H01L27/24 ,  H01L27/08 ,  H01L29/93 ,  H01L29/861 ,  H01L29/24

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

公开(公告)号：US20200227515A1

公开(公告)日：2020-07-16

申请号：US16248496

申请日：2019-01-15

Applicant: Arm Limited

Inventor： Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Saurabh Vinayak Suryavanshi

IPC: H01L49/02 ,  H01L27/11502 ,  H01L29/78

Abstract: Briefly, embodiments of claimed subject matter relate to devices and methods for formation of ferroelectric materials utilizing transition metals, transition metal oxides, post transition metals, and/or post transition metal oxides, which may be doped with bismuth (Bi) in a concentration of between about 0.001% to about 25.0%. Alternatively, a dopant may include bismuth oxide (Bi2O3) or may include bismuth aluminum oxide ((BixAl1−x)2O3). In particular embodiments, such utilization of bismuth and/or related dopants may bring about stabilization of relatively thin ferroelectric devices.

公开(公告)号：US10580981B1

公开(公告)日：2020-03-03

申请号：US16057515

申请日：2018-08-07

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L45/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

Abstract: A method for the manufacture of a correlated electron material device which method comprises forming a conductive substrate and forming a layer of a correlated electron material on the conductive substrate, wherein the forming of the correlated electron material layer comprises: forming a layer of a metal rich transition or other metal compound; and annealing the layer of the metal rich transition or other metal compound in an atmosphere containing a gaseous precursor for an electron-back donating extrinsic ligand capable of occupying an anion vacancy within the transition or other metal compound; wherein the annealing provides that an anion vacancy within the transition or other metal compound is occupied by an electron back-donating extrinsic ligand; and wherein the annealing is carried out at a predetermined temperature and for a predetermined time whereby to activate electron back-donation from a transition or other metal cation to the electron back-donating extrinsic ligand occupying the anion vacancy.

公开(公告)号：US10128438B2

公开(公告)日：2018-11-13

申请号：US15260515

申请日：2016-09-09

Applicant: ARM Limited

Inventor： Kimberly Gay Reid ,  Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska

IPC: H01L45/00

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US10658587B2

公开(公告)日：2020-05-19

申请号：US16169372

申请日：2018-10-24

Applicant: Arm Limited

Inventor： Kimberly Gay Reid ,  Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska

IPC: H01L45/00 ,  G11C13/00

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US20190165271A1

公开(公告)日：2019-05-30

申请号：US16261413

申请日：2019-01-29

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L49/00 ,  H01L49/02

CPC classification number: H01L49/003 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641 ,  H01L49/02

Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.

公开(公告)号：US10727406B2

公开(公告)日：2020-07-28

申请号：US16169114

申请日：2018-10-24

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Kimberly Gay Reid ,  Lucian Shifren

IPC: H01L45/00 ,  C23C14/00 ,  C23C16/50 ,  C23C16/455 ,  C23C14/16

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

公开(公告)号：US20200161549A1

公开(公告)日：2020-05-21

申请号：US16750168

申请日：2020-01-23

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L45/00 ,  C23C16/30 ,  C23C16/455 ,  C23C16/40

Abstract: A correlated electron material device is described to comprise a conductive substrate and a layer of a correlated electron material disposed over the conductive substrate.The layer of correlated electron material may comprise a metal rich transition or other metal compound, and at least a portion of anion vacancies within the metal rich transition or other metal compound are occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal compound. Under certain conditions, the electron back-donating extrinsic ligand occupying anion vacancies may be activated so as to impart particular switching characteristics in the correlated electron material device.

公开(公告)号：US20180076388A1

公开(公告)日：2018-03-15

申请号：US15260515

申请日：2016-09-09

Applicant: ARM Limited

Inventor： Kimberly Gay REID ,  Lucian SHIFREN ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena CELINSKA

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

公开(公告)号：US10593880B2

公开(公告)日：2020-03-17

申请号：US16261413

申请日：2019-01-29

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L45/00 ,  H01L49/00 ,  H01L49/02

Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.