公开(公告)号：US20180323055A1

公开(公告)日：2018-11-08

申请号：US15589849

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

Abstract: A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

公开(公告)号：US09711396B2

公开(公告)日：2017-07-18

申请号：US14741249

申请日：2015-06-16

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Eugene Givens ,  Jacob Huffman Woodruff ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76829 ,  C23C16/02 ,  C23C16/045 ,  C23C16/305 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/285 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/485 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.