公开(公告)号：US09190263B2

公开(公告)日：2015-11-17

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。

公开(公告)号：US09029272B1

公开(公告)日：2015-05-12

申请号：US14069244

申请日：2013-10-31

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0234 ,  H01L21/02348

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract translation: 在图案化衬底上形成间隙填充SiOCH膜的方法包括：（i）提供在其表面上具有凹陷特征的衬底; （ii）用可流动且无孔的SiOCH膜填充基底的凹陷特征; （iii）步骤（ii）完成后，将SiOCH膜暴露于包括氢等离子体的等离子体; 和（iv）用UV光固化等离子体暴露的SiOCH膜。

公开(公告)号：US20150056821A1

公开(公告)日：2015-02-26

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。