公开(公告)号：US20250021015A1

公开(公告)日：2025-01-16

申请号：US18705509

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Jin CHENG ,  Feng CHEN ,  Leiwu ZHENG ,  Yongfa FAN ,  Yen-Wen LU ,  Jen-Shiang WANG ,  Ziyang MA ,  Dianwen ZHU ,  Xi CHEN ,  Yu ZHAO

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/70

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：US20220351359A1

公开(公告)日：2022-11-03

申请号：US17268128

申请日：2019-07-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Chen ZHANG ,  Qiang ZHANG ,  Jen-Shiang WANG ,  Jiao LIANG

IPC: G06T7/00 ,  G03F7/20 ,  G01N23/2251

Abstract: A method for evaluating images of a printed pattern. The method includes obtaining a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying one or more features of the first averaged image. The method further includes evaluating the first averaged image, using an image quality classification model and based at least on the one or more features. The evaluating includes determining, by the image quality classification model, whether the first averaged image satisfies a metric.

公开(公告)号：US20220284344A1

公开(公告)日：2022-09-08

申请号：US17631557

申请日：2020-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Ziyang MA ,  Jin CHENG ,  Ya LUO ,  Leiwu ZHENG ,  Xin GUO ,  Jen-Shiang WANG

IPC: G06N20/00

Abstract: A method for training a machine learning model configured to predict values of a physical characteristic associated with a substrate and for use in adjusting a patterning process. The method involves obtaining a reference image; determining a first set of model parameter values of the machine learning model such that a first cost function is reduced from an initial value of the cost function obtained using an initial set of model parameter values, where the first cost function is a difference between the reference image and an image generated via the machine learning model; and training, using the first set of model parameter values, the machine learning model such that a combination of the first cost function and a second cost function is iteratively reduced, the second cost function representing a difference between measured values and predicted values.

公开(公告)号：US20220260921A1

公开(公告)日：2022-08-18

申请号：US17616368

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang WANG ,  Feng CHEN ,  Matteo Alessandro FRANCAVILLA ,  Jan Wouter BIJLSMA

IPC: G03F7/20 ,  G06F30/392

Abstract: A patterning process modeling method includes determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end includes a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.

公开(公告)号：US20210208507A1

公开(公告)日：2021-07-08

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang WANG ,  Qian Zhao ,  Yunbo GUO ,  Yen-Wen LU ,  Mu FENG ,  Qiang ZHANG

IPC: G03F7/20

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US20220404712A1

公开(公告)日：2022-12-22

申请号：US17772529

申请日：2020-10-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Qiang ZHANG ,  Yunbo GUO ,  Yu CAO ,  Jen-Shiang WANG ,  Yen-Wen LU ,  Danwu CHEN ,  Pengcheng YANG ,  Haoyi LIANG ,  Zhichao CHEN ,  Lingling PU

IPC: G03F7/20 ,  G06V10/774 ,  G06V10/82 ,  G06T7/32 ,  G06T7/33

Abstract: A method for training a machine learning model to generate a predicted measured image, the method including obtaining (a) an input target image associated with a reference design pattern, and (b) a reference measured image associated with a specified design pattern printed on a substrate, wherein the input target image and the reference measured image are non-aligned images; and training, by a hardware computer system and using the input target image, the machine learning model to generate a predicted measured image.

公开(公告)号：US20220179321A1

公开(公告)日：2022-06-09

申请号：US17442662

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Ziyang MA ,  Jin CHENG ,  Ya LUO ,  Leiwu ZHENG ,  Xin GUO ,  Jen-Shiang WANG ,  Yongfa FAN ,  Feng CHEN ,  Yi-Yin CHEN ,  Chenji ZHANG ,  Yen- Wen LU

IPC: G03F7/20 ,  G06N3/08 ,  G06T7/00

Abstract: A method for training a patterning process model, the patterning process model configured to predict a pattern that will be formed by a patterning process. The method involves obtaining an image data associated with a desired pattern, a measured pattern of the substrate, a first model including a first set of parameters, and a machine learning model including a second set of parameters; and iteratively determining values of the first set of parameters and the second set of parameters to train the patterning process model. An iteration involves executing, using the image data, the first model and the machine learning model to cooperatively predict a printed pattern of the substrate; and modifying the values of the first set of parameters and the second set of parameters such that a difference between the measured pattern and the predicted pattern is reduced.

公开(公告)号：US20210294218A1

公开(公告)日：2021-09-23

申请号：US16324933

申请日：2017-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Yongfa FAN ,  Mu FENG ,  Leiwu ZHENG ,  Qian ZHAO ,  Jen-Shiang WANG

IPC: G03F7/20

Abstract: A process to model post-exposure effects in patterning processes, the process including: obtaining values based on measurements of structures formed on one or more substrates by a post-exposure process and values of a pair of process parameters by which process conditions were varied; modeling, by a processor system, as a surface, correlation between the values based on measurements of the structures and the values of the pair of process parameters; and storing the model in memory.

公开(公告)号：US20190258172A1

公开(公告)日：2019-08-22

申请号：US16301458

申请日：2017-05-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang WANG ,  Jay Jianhui CHEN

IPC: G03F7/20

Abstract: A method including: obtaining a relationship between a performance indicator of a substrate measurement recipe and a parameter of the substrate measurement recipe; deriving a range of the parameter from the relationship, wherein absolute values of the performance indicator satisfy a first condition or a magnitude of variation of the performance indicator satisfies a second condition, when the first parameter is in the range; selecting a substrate measurement recipe that has the parameter in the range; and inspecting a substrate with the selected substrate measurement recipe.

公开(公告)号：US20190250519A1

公开(公告)日：2019-08-15

申请号：US16305913

申请日：2017-06-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Ning GU ,  Daimian WANG ,  Jen-Shiang WANG

IPC: G03F7/20 ,  G06F17/50

Abstract: A method including computing a multi-variable cost function, the multi-variable cost function representing a metric characterizing a degree of matching between a result when measuring a metrology target structure using a substrate measurement recipe and a behavior of a pattern of a functional device, the metric being a function of a plurality of design variables including a parameter of the metrology target structure, and adjusting the design variables and computing the cost function with the adjusted design variables, until a certain termination condition is satisfied.