公开(公告)号：US10103508B2

公开(公告)日：2018-10-16

申请号：US15600149

申请日：2017-05-19

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Gosse Charles De Vries ,  Olav Waldemar Vladimir Frijns ,  Leonardus Adrianus Gerardus Grimminck ,  Andelko Katalenic ,  Johannes Antonius Gerardus Akkermans ,  Erik Loopstra ,  Wouter Joep Engelen ,  Petrus Rutgerus Bartraij ,  Teis Johan Coenen ,  Wilhelmus Patrick Elisabeth Maria Op 'T Root

IPC: H01S3/09 ,  H01J1/34 ,  H05H7/08

Abstract: A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

公开(公告)号：US09823572B2

公开(公告)日：2017-11-21

申请号：US14900110

申请日：2014-06-17

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Olav Waldemar Vladimir Frijns ,  Gosse Charles De Vries ,  Erik Roelof Loopstra ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Rilpho Ludovicus Donker ,  Han-Kwang Nienhuys ,  Borgert Kruizinga ,  Wouter Joep Engelen ,  Otger Jan Luiten ,  Johannes Antonius Gerardus Akkermans ,  Leonardus Adrianus Gerardus Grimminck ,  Vladimir Litvinenko

IPC: G03B27/42 ,  G03B27/58 ,  G03F7/20 ,  H01S3/09 ,  G01J1/04 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  G02B26/02 ,  G01J1/26 ,  G01J1/42 ,  H05H7/04 ,  H01S3/00

CPC classification number: G03F7/70033 ,  G01J1/0407 ,  G01J1/0418 ,  G01J1/26 ,  G01J1/429 ,  G02B1/06 ,  G02B5/205 ,  G02B26/023 ,  G03F7/70008 ,  G03F7/7055 ,  G03F7/70558 ,  G03F7/7085 ,  G21K1/10 ,  H01S3/005 ,  H01S3/0085 ,  H01S3/0903 ,  H05H7/04

Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.