公开(公告)号：US11176307B2

公开(公告)日：2021-11-16

申请号：US16349317

申请日：2017-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Venugopal Vellanki ,  Been-Der Chen

IPC: G06F30/398 ,  G06F30/392 ,  G03F1/36 ,  G03F7/20

Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.

公开(公告)号：US08938699B2

公开(公告)日：2015-01-20

申请号：US13896659

申请日：2013-05-17

Applicant: ASML Netherlands B.V.

Inventor： William S. Wong ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Tatsuo Nishibe

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

CPC classification number: G03F1/144 ,  G03F1/36 ,  G03F7/70441 ,  G03F7/705

Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

Abstract translation: 本发明的方法跟踪掩模布局中边缘段的集体移动如何在布局中的控制点处改变抗蚀剂图像值，同时确定布局中每个边缘段的校正量。 用于表示掩模布局中每个边缘段的移动的集合效果的多分离器矩阵用于同时确定掩模布局中每个边缘段的校正量。

公开(公告)号：US08448099B2

公开(公告)日：2013-05-21

申请号：US13652467

申请日：2012-10-15

Applicant: ASML Netherlands B.V.

Inventor： William S. Wong ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Tatsuo Nishibe

IPC: G06F17/50

CPC classification number: G03F1/144 ,  G03F1/36 ,  G03F7/70441 ,  G03F7/705

Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

公开(公告)号：US20130111421A1

公开(公告)日：2013-05-02

申请号：US13656635

申请日：2012-10-19

Applicant: ASML Netherlands B.V.

Inventor： Taihui Liu ,  Been-Der Chen ,  Yen-Wen Lu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/50

Abstract: Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

Abstract translation: 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。