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公开(公告)号：US20130042212A1
公开(公告)日：2013-02-14
申请号：US13652467
申请日：2012-10-15
Applicant: ASML Netherlands B.V.
Inventor： William S. Wong , Been-Der Chen , Yenwen Lu , Jiangwei Li , Tatsuo Nishibe
IPC: G06F17/50
CPC classification number: G03F1/144 , G03F1/36 , G03F7/70441 , G03F7/705
Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.
Abstract translation: 本发明的方法跟踪掩模布局中边缘段的集体移动如何在布局中的控制点处改变抗蚀剂图像值，同时确定布局中每个边缘段的校正量。 用于表示掩模布局中每个边缘段的移动的集合效果的多分离器矩阵用于同时确定掩模布局中每个边缘段的校正量。
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公开(公告)号：US10423745B2
公开(公告)日：2019-09-24
申请号：US14537441
申请日：2014-11-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Hua-Yu Liu , Jiangwei Li , Luoqi Chen , Wei Liu , Jiong Jiang
Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.
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公开(公告)号：US08938699B2
公开(公告)日：2015-01-20
申请号：US13896659
申请日：2013-05-17
Applicant: ASML Netherlands B.V.
Inventor： William S. Wong , Been-Der Chen , Yen-Wen Lu , Jiangwei Li , Tatsuo Nishibe
CPC classification number: G03F1/144 , G03F1/36 , G03F7/70441 , G03F7/705
Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.
Abstract translation: 本发明的方法跟踪掩模布局中边缘段的集体移动如何在布局中的控制点处改变抗蚀剂图像值，同时确定布局中每个边缘段的校正量。 用于表示掩模布局中每个边缘段的移动的集合效果的多分离器矩阵用于同时确定掩模布局中每个边缘段的校正量。
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Patent Agency Ranking
公开(公告)号：US08448099B2
公开(公告)日：2013-05-21
申请号：US13652467
申请日：2012-10-15
Applicant: ASML Netherlands B.V.
Inventor： William S. Wong , Been-Der Chen , Yen-Wen Lu , Jiangwei Li , Tatsuo Nishibe
IPC: G06F17/50
CPC classification number: G03F1/144 , G03F1/36 , G03F7/70441 , G03F7/705
Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.
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5.发明申请METHOD AND APPARATUS FOR COST FUNCTION BASED SIMULTANEOUS OPC AND SBAR OPTIMIZATION 有权基于成本函数的同步OPC和SBAR优化的方法和装置公开(公告)号：US20140359543A1
公开(公告)日：2014-12-04
申请号：US14462187
申请日：2014-08-18
Applicant: ASML Netherlands B.V.
Inventor： Jun TAO , Been-Der Chen , Yen-Wen Lu , Jiangwei Li , Min-Chun Tsai , Dong Mao
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/70 , G03F7/70441
Abstract: Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.
Abstract translation: 这里描述了一种用于获得光刻工艺的优选布局的方法，该方法包括：识别包括多个特征的初始布局; 并重新配置特征直到满足终止条件，从而获得优选布局; 其中所述重新配置包括评估成本函数，所述成本函数测量光刻度量如何受到用于多个平版印刷工艺条件的所述特征的一组变化的影响，以及将所述成本函数扩展成一系列术语，其中至少一些是 特点的特点。
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公开(公告)号：US09619607B2
公开(公告)日：2017-04-11
申请号：US14462187
申请日：2014-08-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Tao , Been-Der Chen , Yen-Wen Lu , Jiangwei Li , Min-Chun Tsai , Dong Mao
CPC classification number: G06F17/5081 , G03F1/70 , G03F7/70441
Abstract: Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.
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公开(公告)号：US20130219348A1
公开(公告)日：2013-08-22
申请号：US13854872
申请日：2013-04-01
Applicant: ASML Netherlands B.V.
Inventor： Jun YE , Jiangwei Li , Stefan Hunsche
IPC: G06F17/50
Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
Abstract translation: 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局，使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型，以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的临界尺寸或其他轮廓度量的加权平均误差，其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值，并在应用进一步的光学邻近校正之前应用于设计布局。
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公开(公告)号：US08832610B2
公开(公告)日：2014-09-09
申请号：US13854872
申请日：2013-04-01
Applicant: ASML Netherlands B.V.
Inventor： Jun Ye , Jiangwei Li , Stefan Hunsche
Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
Abstract translation: 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局，使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型，以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的临界尺寸或其他轮廓度量的加权平均误差，其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值，并在应用进一步的光学邻近校正之前应用于设计布局。
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