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    Multivariable Solver for Optical Proximity Correction
    1.
    发明申请
    Multivariable Solver for Optical Proximity Correction 有权
    用于光学邻近校正的多变量求解器

    公开(公告)号：US20130042212A1

    公开(公告)日：2013-02-14

    申请号：US13652467

    申请日：2012-10-15

    申请人： ASML Netherlands B.V.

    发明人： William S. Wong ,  Been-Der Chen ,  Yenwen Lu ,  Jiangwei Li ,  Tatsuo Nishibe

    IPC分类号： G06F17/50

    CPC分类号： G03F1/144 ,  G03F1/36 ,  G03F7/70441 ,  G03F7/705

    摘要： The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

    摘要翻译： 本发明的方法跟踪掩模布局中边缘段的集体移动如何在布局中的控制点处改变抗蚀剂图像值，同时确定布局中每个边缘段的校正量。 用于表示掩模布局中每个边缘段的移动的集合效果的多分离器矩阵用于同时确定掩模布局中每个边缘段的校正量。

    METHOD AND APPARATUS FOR COST FUNCTION BASED SIMULTANEOUS OPC AND SBAR OPTIMIZATION
    2.
    发明申请
    METHOD AND APPARATUS FOR COST FUNCTION BASED SIMULTANEOUS OPC AND SBAR OPTIMIZATION 有权
    基于成本函数的同步OPC和SBAR优化的方法和装置

    公开(公告)号：US20140359543A1

    公开(公告)日：2014-12-04

    申请号：US14462187

    申请日：2014-08-18

    申请人： ASML Netherlands B.V.

    发明人： Jun TAO ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Min-Chun Tsai ,  Dong Mao

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F1/70 ,  G03F7/70441

    摘要： Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.

    摘要翻译： 这里描述了一种用于获得光刻工艺的优选布局的方法，该方法包括：识别包括多个特征的初始布局; 并重新配置特征直到满足终止条件，从而获得优选布局; 其中所述重新配置包括评估成本函数，所述成本函数测量光刻度量如何受到用于多个平版印刷工艺条件的所述特征的一组变化的影响，以及将所述成本函数扩展成一系列术语，其中至少一些是 特点的特点。

    Method and apparatus for model based flexible MRC
    3.
    发明授权
    Method and apparatus for model based flexible MRC 有权
    基于模型的柔性MRC的方法和装置

    公开(公告)号：US08806389B2

    公开(公告)日：2014-08-12

    申请号：US13656635

    申请日：2012-10-19

    申请人： ASML Netherlands B.V.

    发明人： Taihui Liu ,  Been-Der Chen ,  Yen-Wen Lu

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F1/70 ,  G06F17/50

    摘要： Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

    摘要翻译： 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。

    Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (MB-SRAF)
    5.
    发明授权
    Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (MB-SRAF) 有权
    用于增强信号强度的方法和装置，用于改进基于模型的子分辨率辅助特征（MB-SRAF）的生成和放置

    公开(公告)号：US08826198B2

    公开(公告)日：2014-09-02

    申请号：US13892984

    申请日：2013-05-13

    申请人： ASML Netherlands B.V.

    发明人： Min-Chun Tsai ,  Been-Der Chen ,  Yen-Wen Lu

    IPC分类号： G06F17/50

    CPC分类号： G06F17/50 ,  G03F1/36

    摘要： Model-Based Sub-Resolution Assist Feature (SRAF) generation process and apparatus are disclosed, in which an SRAF guidance map (SGM) is iteratively optimized to finally output an optimized set of SRAFs as a result of enhanced signal strength obtained by iterations involving SRAF polygons and SGM image. SRAFs generated in a prior round of iteration are incorporated in a mask layout to generate a subsequent set of SRAFs. The iterative process is terminated when a set of SRAF accommodates a desired process window or when a predefined process window criterion is satisfied. Various cost functions, representing various lithographic responses, may be predefined for the optimization process.

    摘要翻译： 公开了基于模型的子分解辅助特征（SRAF）生成过程和装置，其中SRAF引导图（SGM）被迭代地优化，以最终输出优化的SRAF集合作为通过涉及SRAF的迭代获得的增强的信号强度的结果 多边形和SGM形象。 在前一轮迭代中生成的SRAF被并入到掩模布局中以产生随后的一组SRAF。 当一组SRAF适应期望的过程窗口或者当满足预定义的过程窗口标准时，迭代过程被终止。 代表各种光刻响应的各种成本函数可以为优化过程预定义。

    Method and apparatus for model based flexible MRC
    7.
    发明授权
    Method and apparatus for model based flexible MRC 有权
    基于模型的柔性MRC的方法和装置

    公开(公告)号：US09418194B2

    公开(公告)日：2016-08-16

    申请号：US14456462

    申请日：2014-08-11

    申请人： ASML NETHERLANDS B.V.

    发明人： Taihui Liu ,  Been-Der Chen ,  Yen-Wen Lu

    IPC分类号： G06F17/50 ,  G03F1/70

    CPC分类号： G06F17/5081 ,  G03F1/70 ,  G06F17/50

    摘要： Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

    摘要翻译： 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。

    Method for determining curvilinear patterns for patterning device
    10.
    发明授权
    Method for determining curvilinear patterns for patterning device 有权

    公开(公告)号：US11232249B2

    公开(公告)日：2022-01-25

    申请号：US16976492

    申请日：2019-02-28

    申请人： ASML NETHERLANDS B.V.

    发明人： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

    IPC分类号： G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G06F119/18

    摘要： A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.