公开(公告)号：US10296681B2

公开(公告)日：2019-05-21

申请号：US15982933

申请日：2018-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing Chen ,  Shufeng Bai ,  Eric Richard Kent ,  Yen-Wen Lu ,  Paul Anthony Tuffy ,  Jen-Shiang Wang ,  Youping Zhang ,  Gertjan Zwartjes ,  Jan Wouter Bijlsma

IPC: G06F17/50 ,  G03F7/00 ,  G03F7/20 ,  G06F17/12 ,  G06F17/14

Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.

公开(公告)号：US10007744B2

公开(公告)日：2018-06-26

申请号：US14941347

申请日：2015-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing Chen ,  Shufeng Bai ,  Eric Richard Kent ,  Yen-Wen Lu ,  Paul Anthony Tuffy ,  Jen-Shiang Wang ,  Youping Zhang ,  Gertjan Zwartjes ,  Jan Wouter Bijlsma

IPC: G06F17/50 ,  G03F7/00 ,  G03F7/20 ,  G06F17/12 ,  G06F17/14

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/12 ,  G06F17/14 ,  G06F2217/12 ,  G06F2217/14

Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.