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Patent Agency Ranking
公开(公告)号：US09494874B2
公开(公告)日：2016-11-15
申请号：US14578036
申请日：2014-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Jen-Shiang Wang , Shufeng Bai
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70625 , G03F7/70641 , G03F7/70683
Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.
Abstract translation: 一种用于选择在基板上使用的测量目标的系统和方法，包括对于每个所提出的目标执行对于处理窗口区域上的多个点的光刻模拟，识别多个点中的任一点的灾难性误差 每个所提出的目标，消除每个目标在多个点中的任一点具有灾难性错误，执行度量仿真以确定在多个点中的任一点上没有灾难性错误的每个目标的处理窗口上的参数，并且使用 一个或多个产生的确定的模拟参数来评估目标质量。
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公开(公告)号：US20180268093A1
公开(公告)日：2018-09-20
申请号：US15982933
申请日：2018-05-17
Applicant: ASML Netherlands B.V.
Inventor： Guangqing CHEN , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US10296681B2
公开(公告)日：2019-05-21
申请号：US15982933
申请日：2018-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US10007744B2
公开(公告)日：2018-06-26
申请号：US14941347
申请日：2015-11-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US20150185626A1
公开(公告)日：2015-07-02
申请号：US14578036
申请日：2014-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing CHEN , Jen-Shiang Wang , Shufeng Bai
IPC: G03F7/20
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70625 , G03F7/70641 , G03F7/70683
Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.
Abstract translation: 一种用于选择在基板上使用的测量目标的系统和方法，包括对于每个所提出的目标执行对于处理窗口区域上的多个点的光刻模拟，识别多个点中的任一点的灾难性误差 每个所提出的目标，消除每个目标在多个点中的任一点具有灾难性错误，执行度量仿真以确定在多个点中的任一点上没有灾难性错误的每个目标的处理窗口上的参数，并且使用 一个或多个产生的确定的模拟参数来评估目标质量。
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