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公开(公告)号：US09355200B2
公开(公告)日：2016-05-31
申请号：US14577820
申请日：2014-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Eric Richard Kent , Jen-Shiang Wang , Omer Abubaker Omer Adam
CPC classification number: G03F7/706 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70683 , G06F17/5009 , G06F17/5068 , G06F2217/12 , G06F2217/14
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
Abstract translation: 描述了一种计量目标设计方法。 该方法包括确定用于度量目标设计的参数对光学像差的灵敏度，确定使用光刻设备的光学系统暴露的产品设计的参数，以及基于以下方式确定对度量目标设计的参数的影响： 产品设计的参数和灵敏度的乘积以及光学系统的各个像差中的一个或多个。
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Patent Agency Ranking
公开(公告)号：US20150186581A1
公开(公告)日：2015-07-02
申请号：US14577820
申请日：2014-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Eric Richard Kent , Jen-Shiang Wang , Omer Abubaker Omer Adam
IPC: G06F17/50
CPC classification number: G03F7/706 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70683 , G06F17/5009 , G06F17/5068 , G06F2217/12 , G06F2217/14
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
Abstract translation: 描述了一种计量目标设计方法。 该方法包括确定用于度量目标设计的参数对光学像差的灵敏度，确定使用光刻设备的光学系统暴露的产品设计的参数，以及基于以下方式确定对度量目标设计的参数的影响： 产品设计的参数和灵敏度的乘积以及光学系统的各个像差中的一个或多个。
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公开(公告)号：US10296681B2
公开(公告)日：2019-05-21
申请号：US15982933
申请日：2018-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US10007744B2
公开(公告)日：2018-06-26
申请号：US14941347
申请日：2015-11-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US20180268093A1
公开(公告)日：2018-09-20
申请号：US15982933
申请日：2018-05-17
Applicant: ASML Netherlands B.V.
Inventor： Guangqing CHEN , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US09804504B2
公开(公告)日：2017-10-31
申请号：US15154456
申请日：2016-05-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Eric Richard Kent , Jen-Shiang Wang , Omer Abubaker Omer Adam
CPC classification number: G03F7/706 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70683 , G06F17/5009 , G06F17/5068 , G06F2217/12 , G06F2217/14
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.
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