Process for collective manufacturing of small volume high precision membranes and cavities
    16.
    发明授权
    Process for collective manufacturing of small volume high precision membranes and cavities 有权
    小容量高精度膜和腔体的集体制造工艺

    公开(公告)号:US07838393B2

    公开(公告)日:2010-11-23

    申请号:US12298894

    申请日:2007-04-26

    摘要: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

    摘要翻译: 本发明涉及一种用于集体制造具有给定厚度d的空腔和/或膜(24)的方法,其中所述晶片被称为绝缘体上半导体层,包括至少一个具有厚度d的半导体表面层 绝缘层本身被支撑在基板上,该方法包括:蚀刻具有厚度d的半导体表面层,绝缘层形成停止层,以在表面层中形成所述空腔和/或膜。

    PROCESS FOR COLLECTIVE MANUFACTURING OF SMALL VOLUME HIGH PRECISION MEMBRANES AND CAVITIES
    17.
    发明申请
    PROCESS FOR COLLECTIVE MANUFACTURING OF SMALL VOLUME HIGH PRECISION MEMBRANES AND CAVITIES 有权
    集中制造小容量高精密膜和CAVIQU的过程

    公开(公告)号:US20090130822A1

    公开(公告)日:2009-05-21

    申请号:US12298894

    申请日:2007-04-26

    IPC分类号: H01L21/98 H01L21/306

    摘要: The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising: etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

    摘要翻译: 本发明涉及一种用于集体制造具有给定厚度d的空腔和/或膜(24)的方法,其中所述晶片被称为绝缘体上半导体层,包括至少一个具有厚度d的半导体表面层 绝缘层本身被支撑在基板上,该方法包括:蚀刻具有厚度d的半导体表面层,绝缘层形成停止层,以在表面层中形成所述空腔和/或膜。