Microtip display device having a current limiting layer and a charge
avoiding layer
    11.
    发明授权
    Microtip display device having a current limiting layer and a charge avoiding layer 失效
    Microtip显示装置具有限流层和电荷避免层

    公开(公告)号:US5717285A

    公开(公告)日:1998-02-10

    申请号:US618187

    申请日:1996-03-19

    CPC classification number: H01J3/022 H01J31/127 H01J2329/863

    Abstract: A cathodoluminescent anode is formed on an insulating substrate, while on another insulating substrate are formed cathode conductors, an insulating layer, a grid layer used for the formation of grids, holes in the insulating layer and the grid layer and microtips in the holes. Moreover, a thin insulating layer is formed on the grid layer in order to limit the current liable to flow between the anode and the grids. Another thin layer or film is formed on the thin insulating layer that is sufficiently conductive or resistive to prevent disturbance by the thin electrically insulating layer, of the electric field created between the microtips and the grids.

    Abstract translation: 在绝缘基板上形成阴极发光阳极,而在另一绝缘基板上形成阴极导体,绝缘层,用于形成网格的栅格层,绝缘层中的孔和栅格层以及孔中的微尖端。 此外,在栅格层上形成薄的绝缘层,以便限制在阳极和栅格之间流动的电流。 在薄绝缘层上形成另一薄层或薄膜,该薄绝缘层具有足够的导电性或电阻性,以防止薄电绝缘层对微尖端和网格之间产生的电场的干扰。

    Method for obtaining self-aligned openings, in particular for microtip flat display focusing electrode
    12.
    发明授权
    Method for obtaining self-aligned openings, in particular for microtip flat display focusing electrode 失效
    用于获得自对准开口的方法,特别是用于微尖端平面显示聚焦电极

    公开(公告)号:US06276981B1

    公开(公告)日:2001-08-21

    申请号:US09463444

    申请日:2000-04-04

    CPC classification number: H01J9/025 H01J2329/00

    Abstract: The invention involves the making of a group of apertures spaced in a precise manner on a structure and including, for example, a first aperture made in a first layer and a second aperture made in a second layer which covers the first layer, the first aperture being located within the second aperture. This involves: applying a first layer (41) of photosensitive resin, the etching of this resin layer by photolithography, by means of a single template, to leave a spot of resin (42) per group of apertures on the first layer (41), the exterior limits of the resin spot corresponding to the second aperture, and with the resin spot including an aperture (43) corresponding to the first aperture, vacuum application on the first layer (41) and on the remaining resin of material (44) which will make up the second layer, this application being done so that the part (45) of the first layer located at the bottom of the aperture (43) of the resin spot (42) is not covered by this deposit, the etching of the first layer (41) from the aperture (43) of the spot (42) to obtain the first aperture (46) in the first layer, elimination of the remaining resin and material covering it to obtain the second aperture in the second layer.

    Abstract translation: 本发明涉及制造一组以精确的方式在结构上间隔开的孔,并且包括例如由第一层制成的第一孔和形成在覆盖第一层的第二层中的第二孔,第一孔 位于第二孔内。 这包括:通过单个模板施加感光树脂的第一层(41),通过光刻对该树脂层进行蚀刻,以在第一层(41)上留下每组孔的树脂(42)点, ,对应于第二孔的树脂点的外部限制,并且在树脂点包括对应于第一孔的孔(43),在第一层(41)上和剩余的材料树脂(44)上的真空施加, 这将构成第二层,该应用程序被完成,使得位于树脂斑点(42)的孔(43)的底部的第一层的部分(45)不被该沉积物覆盖,蚀刻 来自点(42)的孔(43)的第一层(41),以获得第一层中的第一孔(46),消除剩余的树脂和覆盖它的材料以获得第二层中的第二孔。

    Method for making an electron source with microtips, with self-aligned focusing grid
    13.
    发明授权
    Method for making an electron source with microtips, with self-aligned focusing grid 失效
    具有微尖端的电子源的方法,具有自对准聚焦网格

    公开(公告)号:US06210246B1

    公开(公告)日:2001-04-03

    申请号:US09463383

    申请日:2000-02-18

    CPC classification number: H01J9/025 H01J3/022 H01J2329/00

    Abstract: A process for manufacturing a micropoint electron source with an extraction grid and a focusing grid. This process allows for precise alignment of the holes of the extraction grid with the apertures of the focusing grid by using a single photolithography step for making the holes in the extraction grid. Such a process may find particular application for making a micropoint electron source for a flat viewing screen.

    Abstract translation: 一种具有提取网格和聚焦网格的微点电子源的制造方法。 该过程允许通过使用用于在提取网格中形成孔的单个光刻步骤来将提取格栅的孔与聚焦栅格的孔精确对准。 这种方法可以发现用于制造平面观察屏的微点电子源的具体应用。

    Process of forming holes in a photosensitive resin layer to produce
cathodes with microtips
    14.
    发明授权
    Process of forming holes in a photosensitive resin layer to produce cathodes with microtips 失效
    在感光树脂层中形成孔以用微尖端产生阴极的工艺

    公开(公告)号:US5669800A

    公开(公告)日:1997-09-23

    申请号:US533719

    申请日:1995-09-26

    CPC classification number: G03F7/0015 G03F7/20 H01J9/025

    Abstract: A process for the formation of holes in a photosensitive resin layer, which can be applied to the production of electron sources having emissive cathodes with microtips and flat display screens. According to this process, a resin layer is exposed through a monolayer of balls transparent to an exposure light, with each ball focussing the light onto the resin layer and in this way bringing about the exposure of an area of said resin layer so that the thus exposed resin layer is developed.

    Abstract translation: 用于在感光性树脂层中形成孔的方法,其可以应用于具有微尖端和平面显示屏的具有发射阴极的电子源的生产。 根据该方法,树脂层通过对曝光光透明的单层球曝光,每个球将光聚焦到树脂层上,并以这种方式引起所述树脂层的面积的曝光, 开发了露出的树脂层。

    Process for the production of a microtip electron source
    15.
    发明授权
    Process for the production of a microtip electron source 失效
    用于生产微尖端电子源的方法

    公开(公告)号:US5482486A

    公开(公告)日:1996-01-09

    申请号:US266465

    申请日:1994-06-27

    CPC classification number: H01J9/025 H01J2201/319

    Abstract: A method for forming a microtip electron source includes the steps of forming a first microtip electron source using a mask, determining deviations in the structure of the first microtip electron source from a structure which should theoretically have been obtained using the first mask, and then correcting the first mask used during fabrication of the first microtip electron source that are designed to generate additional deviations that compensate for the effects upon performance of the deviations determined in the first microtip electron source when subsequent microtip electron sources are fabricated using the mask.

    Abstract translation: 用于形成微尖端电子源的方法包括以下步骤:使用掩模形成第一微尖端电子源,从理论上使用第一掩模获得的结构确定第一微尖电子源的结构偏差,然后校正 在制造第一微尖端电子源期间使用的第一掩模被设计成产生额外的偏差,其补偿当使用掩模制造后续微尖端电子源时在第一微尖端电子源中确定的偏差的影响。

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