公开(公告)号：US20220285577A1

公开(公告)日：2022-09-08

申请号：US17649018

申请日：2022-01-26

Applicant: Apple Inc.

Inventor： Lei Zhang ,  Fang Ou ,  Lina He ,  Paul S. Drzaic ,  Dmitry S. Sizov ,  Ranojoy Bose ,  Yuewei Zhang ,  Xiaobin Xin ,  Nathaniel T. Lawrence ,  Wei H. Yao

IPC: H01L33/00 ,  H01L25/16

Abstract: Methods and structures are described to facilitate the transfer of device layer coupons with controlled vertical position. In an embodiment, a plurality of device layer coupons is bonded to a receiving substrate with an adhesive layer, where distance between front surfaces of the plurality of device layer coupons and a bulk layer of the receiving substrate is controlled by a plurality of rigid mechanical spacers.

公开(公告)号：US20200343230A1

公开(公告)日：2020-10-29

申请号：US16960480

申请日：2019-01-22

Applicant: Apple Inc.

Inventor： Dmitry S. Sizov ,  Ion Bita ,  Jean-Jacques P. Drolet ,  John T. Leonard ,  Jonathan S. Steckel ,  Nathaniel T. Lawrence ,  Xiaobin Xin ,  Ranojoy Bose

IPC: H01L25/075 ,  H01L25/18 ,  H01L33/60 ,  H01L25/16 ,  H01L23/00

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

公开(公告)号：US10923626B2

公开(公告)日：2021-02-16

申请号：US16547166

申请日：2019-08-21

Applicant: Apple Inc.

Inventor： David P. Bour ,  Dmitry S. Sizov ,  Daniel A. Haeger ,  Xiaobin Xin

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/02 ,  H01L33/44 ,  H01L33/62

Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.

公开(公告)号：US10591774B2

公开(公告)日：2020-03-17

申请号：US15693305

申请日：2017-08-31

Applicant: Apple Inc.

Inventor： Jean-Jacques P. Drolet ,  Yuan Chen ,  Jonathan S. Steckel ,  Ion Bita ,  Dmitry S. Sizov ,  Chia Hsuan Tai ,  John T. Leonard ,  Lai Wang ,  Ove Lyngnes ,  Xiaobin Xin ,  Zhibing Ge

IPC: G02F1/1335 ,  G02F1/1343 ,  F21V8/00 ,  G06F3/044 ,  G02F1/1368 ,  G02F1/1333 ,  G06F3/041

Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.

公开(公告)号：US10516081B1

公开(公告)日：2019-12-24

申请号：US15908492

申请日：2018-02-28

Applicant: Apple Inc.

Inventor： Xiaobin Xin ,  Dmitry S. Sizov ,  Andreas Bibl ,  Ion Bita ,  Yuan Chen ,  Lai Wang ,  Zhibing Ge

IPC: H01L33/24 ,  H01L33/60 ,  H01L33/42 ,  H01L33/18 ,  H01L27/15 ,  H01L33/52

Abstract: Light emitting structures are described in which vertical inorganic semiconductor-based light emitting diodes (LEDs) with hexagon shaped sidewalls are mounted within corresponding circular reflective well structures. Diffuser layers may additionally laterally surround the hexagon shaped sidewalls within the circular reflective well structures.