公开(公告)号：US20160189936A1

公开(公告)日：2016-06-30

申请号：US14586153

申请日：2014-12-30

Applicant: Applied Materials, Inc.

Inventor： Bonnie T. CHIA ,  Cheng-Hsiung TSAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32651 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32477

Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

Abstract translation: 半导体基板等离子体处理装置。 该装置的方面包括具有布置在上屏蔽件中心的气体扩散器的上屏蔽。 气体扩散器和上部屏蔽层以加工方式将工艺气体进入处理室。 上护罩的轮廓促进了工艺气体的径向膨胀和从衬底的表面蚀刻的材料的径向行进。 上屏蔽的曲率将蚀刻的材料引导到下屏蔽层，同时减少了在上屏蔽上沉积蚀刻的材料。 下屏蔽还包括弯曲表面，其将蚀刻的材料引向槽，使得蚀刻的材料能够以较低的沉积在下屏蔽上从处理室中排出。

公开(公告)号：US20140366912A1

公开(公告)日：2014-12-18

申请号：US14280201

申请日：2014-05-16

Applicant: Applied Materials, Inc.

Inventor： Richard J. GREEN ,  Cheng-Hsiung TSAI ,  Shambhu N. ROY ,  Puneet BAJAJ ,  David H. LOO

IPC: H01J37/32 ,  C23C14/56

CPC classification number: H01J37/32862 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3408

Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

Abstract translation: 提供了用于沉积室的原位等离子体清洗的方法和装置。 在一个实施例中，提供了一种用于在不破坏真空的情况下等离子体清洁沉积室的方法。 该方法包括将基板定位在设置在室中的基座上并由电浮动沉积环外接，在基板上沉积金属膜和在室中沉积环，使沉积在沉积环上的金属膜接地而不破坏真空， 以及在腔室中形成的等离子体从室中除去污染物，而不对接地的沉积环上的金属膜进行再溅射，而不破坏真空。