公开(公告)号：US20180337047A1

公开(公告)日：2018-11-22

申请号：US15984285

申请日：2018-05-18

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Gene LEE ,  Hailong ZHOU ,  Zohreh HESABI ,  Akhil MEHROTRA ,  Shan JIANG ,  Abhijit PATIL ,  Chi-I LANG ,  Larry GAO

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device substrate is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device substrate comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.