公开(公告)号：US20220392774A1

公开(公告)日：2022-12-08

申请号：US17887206

申请日：2022-08-12

Applicant: Applied Materials, Inc.

Inventor： Akhil MEHROTRA ,  Gene S. LEE ,  Abhijit PATIL ,  Shan JIANG ,  Zohreh HESABI

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

公开(公告)号：US20210193481A1

公开(公告)日：2021-06-24

申请号：US17197757

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Akhil MEHROTRA ,  Gene S. LEE ,  Abhijit PATIL ,  Shan JIANG ,  Zohreh HESABI

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

公开(公告)号：US20200227276A1

公开(公告)日：2020-07-16

申请号：US16828751

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Akhil MEHROTRA ,  Gene LEE ,  Abhijit PATIL ,  Shan JIANG ,  Zohreh HESABI

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

公开(公告)号：US20190096695A1

公开(公告)日：2019-03-28

申请号：US16141777

申请日：2018-09-25

Applicant: Applied Materials, Inc.

Inventor： Akhil MEHROTRA ,  Gene LEE ,  Abhijit PATIL ,  Shan JIANG ,  Zohreh HESABI

IPC: H01L21/3213 ,  H01L21/3065 ,  H01L21/285

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

公开(公告)号：US20180337047A1

公开(公告)日：2018-11-22

申请号：US15984285

申请日：2018-05-18

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Gene LEE ,  Hailong ZHOU ,  Zohreh HESABI ,  Akhil MEHROTRA ,  Shan JIANG ,  Abhijit PATIL ,  Chi-I LANG ,  Larry GAO

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device substrate is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device substrate comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.

公开(公告)号：US20190221441A1

公开(公告)日：2019-07-18

申请号：US16245251

申请日：2019-01-10

Applicant: Applied Materials, Inc.

Inventor： Shan JIANG ,  Gene LEE ,  Akhil MEHROTRA ,  Zohreh HESABI

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01L21/31144

Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.

公开(公告)号：US20180025914A1

公开(公告)日：2018-01-25

申请号：US15216948

申请日：2016-07-22

Applicant: Applied Materials, Inc.

Inventor： Hailong ZHOU ,  Gene LEE ,  Abhijit PATIL ,  Shan JIANG ,  Akhil MEHROTRA ,  Jonathan KIM

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144

Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process. In one embodiment, a method for etching a dielectric anti-reflective coating (DARC) layer to form features in the DARC layer includes supplying an etching gas mixture onto a DARC layer disposed on a substrate, wherein the substrate is disposed on a substrate support pedestal assembly disposed in a processing chamber, controlling a temperature of the substrate support pedestal assembly greater than 110 degrees Celsius, and etching the DARC layer disposed on the substrate.