公开(公告)号：US20180337047A1

公开(公告)日：2018-11-22

申请号：US15984285

申请日：2018-05-18

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Gene LEE ,  Hailong ZHOU ,  Zohreh HESABI ,  Akhil MEHROTRA ,  Shan JIANG ,  Abhijit PATIL ,  Chi-I LANG ,  Larry GAO

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device substrate is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device substrate comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.

公开(公告)号：US20230377890A1

公开(公告)日：2023-11-23

申请号：US18228234

申请日：2023-07-31

Applicant: Applied Materials, Inc.

Inventor： Larry GAO ,  Nancy FUNG

IPC: H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  G03F7/0042

Abstract: A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.

公开(公告)号：US20210358751A1

公开(公告)日：2021-11-18

申请号：US17202043

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Larry GAO ,  Nancy FUNG

IPC: H01L21/033 ,  H01L21/311

Abstract: A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.