公开(公告)号：US11578406B2

公开(公告)日：2023-02-14

申请号：US17114798

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220178020A1

公开(公告)日：2022-06-09

申请号：US17114798

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US12241594B2

公开(公告)日：2025-03-04

申请号：US17898608

申请日：2022-08-30

Applicant: Applied Materials, Inc.

Inventor： David Marquardt

IPC: C23C16/448 ,  F17C3/00

Abstract: Ampoules including a housing, a lid and a floating structure are described. The floating structure includes a float with a volume determined to displace a predetermined volume of liquid within the ampoule. An outlet channel extends from the top surface of the float. A baffle is positioned along the length of the outlet channel and creates a saturation zone between the baffle and the float.

公开(公告)号：US20250027199A1

公开(公告)日：2025-01-23

申请号：US18222671

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： David Marquardt

IPC: C23C16/455 ,  C23C16/448 ,  H01L21/02

Abstract: Ampoules including a solid volume of the semiconductor chemical precursor and methods of use and manufacturing are described. The solid volume of the semiconductor chemical precursor includes an ingress opening, at least one flow channel, and an outlet passage that are in fluid communication with each other. The solid volume of the semiconductor manufacturing precursor is made of a porous or alternatively a non-porous material. A flow path is defined by at least one flow channel through which a carrier gas flows in contact with the solid volume of the semiconductor chemical precursor.

公开(公告)号：US11773485B2

公开(公告)日：2023-10-03

申请号：US18095053

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/4402

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220145454A1

公开(公告)日：2022-05-12

申请号：US17094208

申请日：2020-11-10

Applicant: Applied Materials, Inc.

Inventor： David Marquardt

IPC: C23C16/448 ,  C23C16/455 ,  B01J7/00

Abstract: Embodiments described herein generally relate to apparatus having a canister with a sidewall, a top, and a bottom forming a canister volume. An inlet line and an outlet line is coupled to the top and is in fluid communication with the canister volume. A plate disposed within the canister volume forms a headspace volume below the plate. Each of the inlet line and the outlet line is in fluid communication with the headspace volume. The apparatus includes standoffs extending from a lower surface of the plate. The standoffs include a lower surface area substantially parallel with the plate.