公开(公告)号：US11773485B2

公开(公告)日：2023-10-03

申请号：US18095053

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/4402

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US12054825B2

公开(公告)日：2024-08-06

申请号：US17355119

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  David Marquardt ,  Mohith Verghese

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4482

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US11584990B2

公开(公告)日：2023-02-21

申请号：US17367284

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/44

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220403512A1

公开(公告)日：2022-12-22

申请号：US17355119

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  David Marquardt ,  Mohith Verghese

IPC: C23C16/448

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US11859281B2

公开(公告)日：2024-01-02

申请号：US18145553

申请日：2022-12-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

CPC classification number: C23C16/4481 ,  H01L21/67017

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20230002893A1

公开(公告)日：2023-01-05

申请号：US17367284

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/448 ,  C23C16/44

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20230160064A1

公开(公告)日：2023-05-25

申请号：US18095053

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/448 ,  C23C16/44

CPC classification number: C23C16/4481 ,  C23C16/4402

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20230126780A1

公开(公告)日：2023-04-27

申请号：US18145553

申请日：2022-12-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US11578406B2

公开(公告)日：2023-02-14

申请号：US17114798

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220178020A1

公开(公告)日：2022-06-09

申请号：US17114798

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.