公开(公告)号：US20200266064A1

公开(公告)日：2020-08-20

申请号：US16790563

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Rajaram NARAYANAN ,  Fang RUAN ,  Prashant Kumar KULSHRESHTHA ,  Diwakar N. KEDLAYA ,  Karthik JANAKIRAMAN

IPC: H01L21/033 ,  H01L21/02 ,  H01J37/32 ,  C23C16/30 ,  C23C16/505

Abstract: Embodiments of the present disclosure generally relate to a method of processing a substrate. The method includes exposing the substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a radio frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture/((boron-containing gas mixture)+hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hardmask film provides high modulus, etch selectivity, and stress for high aspect-ratio features (e.g., 10:1 or above) and smaller dimension devices (e.g., 7 nm node or below).

公开(公告)号：US20180350595A1

公开(公告)日：2018-12-06

申请号：US15994409

申请日：2018-05-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. SRINIVASAN ,  Atashi BASU ,  Pramit MANNA ,  Khokan C. PAUL ,  Diwakar N. KEDLAYA

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/24 ,  C23C16/56

CPC classification number: H01L21/02348 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/321 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.