公开(公告)号：US20230220551A1

公开(公告)日：2023-07-13

申请号：US18119406

申请日：2023-03-09

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  C23C16/458 ,  H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/503 ,  C23C16/4586 ,  H01L21/02274 ,  C23C16/52 ,  C23C16/505 ,  C23C16/45502 ,  H01L21/02521 ,  H01L21/02115

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US20230154726A1

公开(公告)日：2023-05-18

申请号：US18155424

申请日：2023-01-17

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Tza-Jing GUNG ,  Samuel E. GOTTHEIM ,  Timothy Joseph FRANKLIN ,  Pramit MANNA ,  Eswaranand VENKATASUBRAMANIAN ,  Edward HAYWOOD ,  Stephen C. GARNER ,  Adam FISCHBACH

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/32082 ,  C23C16/505 ,  C23C16/455 ,  H01L21/3065 ,  H01J37/32623 ,  H01L21/02274 ,  H01J37/32715

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

公开(公告)号：US20230139431A1

公开(公告)日：2023-05-04

申请号：US18088889

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Samuel E. GOTTHEIM ,  Abhijit B. MALLICK ,  Pramit MANNA ,  Eswaranand VENKATASUBRAMANIAN ,  Timothy Joseph FRANKLIN ,  Edward HAYWOOD ,  Stephen C. GARNER ,  Adam FISCHBACH

IPC: H01J37/32 ,  C23C16/509

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

公开(公告)号：US20210407801A1

公开(公告)日：2021-12-30

申请号：US16915110

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/458 ,  C23C16/27

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing high-density films for patterning applications. In one or more embodiments, a method of processing a substrate is provided and includes flowing a deposition gas containing a hydrocarbon compound and a dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, where the processing volume is maintained at a pressure of about 0.5 mTorr to about 10 Torr. The method also includes generating a plasma at the substrate by applying a first RF bias to the electrostatic chuck to deposit a doped diamond-like carbon film on the substrate, where the doped diamond-like carbon film has a density of greater than 2 g/cc and a stress of less than −500 MPa.

公开(公告)号：US20200370177A1

公开(公告)日：2020-11-26

申请号：US16876845

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph FRANKLIN ,  Adam FISCHBACH ,  Edward HAYWOOD ,  Abhijit B. MALLICK ,  Pramit MANNA ,  Carlaton WONG ,  Stephen C. GARNER ,  Eswaranand VENKATASUBRAMANIAN

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/46 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

公开(公告)号：US20190237325A1

公开(公告)日：2019-08-01

申请号：US15880702

申请日：2018-01-26

Applicant: Applied Materials, Inc.

Inventor： Fei WANG ,  Miaojun WANG ,  Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Robert Jan VISSER

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0273 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31116 ,  H01L21/31138

Abstract: Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels.

公开(公告)号：US20160365248A1

公开(公告)日：2016-12-15

申请号：US15137486

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Pramit MANNA ,  Li Yan MIAO ,  Deenesh PADHI ,  Bok Hoen KIM ,  Christopher Dennis BENCHER

IPC: H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

Abstract translation: 本公开的实施例涉及在光致抗蚀剂或硬掩模中形成的特征上沉积保形有机材料，以减少临界尺寸和线边缘粗糙度。 在各种实施例中，将超适形碳基材料沉积在形成于高分辨率光致抗蚀剂中的特征上。 在光致抗蚀剂上形成的共形有机层因此降低了特征的临界尺寸和线边缘粗糙度。

公开(公告)号：US20160005596A1

公开(公告)日：2016-01-07

申请号：US14770412

申请日：2014-02-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

Abstract translation: 本发明的实施方案涉及保形碳基材料的沉积。 在一个实施例中，该方法包括在衬底上沉积具有预定厚度的牺牲电介质层，通过去除牺牲电介质层的部分以暴露衬底的上表面，引入烃源，等离子体 - 引发气体和稀释气体进入处理室，其中烃源的体积流量：等离子体起始气体：稀释气体的比例为1:0.5:20，在约300℃的沉积温度下产生等离子体 C至约500℃以在图案化特征和暴露的基底的上表面上沉积共形无定形碳层，从图案化特征的上表面和基底的上表面选择性地除去无定形碳层， 图案特征。

公开(公告)号：US20150167160A1

公开(公告)日：2015-06-18

申请号：US14270216

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Amit CHATTERJEE ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Ningli LIU ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Mukund SRINIVASAN

IPC: C23C16/452

CPC classification number: C23C16/452 ,  H01J37/32357 ,  H01J37/32422

Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.

Abstract translation: 一种或多种前体气体，例如一种或多种含硅气体，其可以是一种或多种有机硅和/或原硅酸四烷基酯，被引入处理室并暴露于自由基。 使用本文公开的技术沉积的介质膜可以含有硅。 沉积膜可能表现出很少的缺陷，低收缩率和高蚀刻选择性，机械稳定性和热稳定性。 沉积条件可能非常温和，因此对紫外辐射和离子轰击对基底和沉积膜的损伤最小或不存在。

公开(公告)号：US20240087894A1

公开(公告)日：2024-03-14

申请号：US18507328

申请日：2023-11-13

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Pramit MANNA ,  Abhijit B. MALLICK

IPC: H01L21/033 ,  C23C16/27 ,  C23C16/509 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/0337 ,  C23C16/272 ,  C23C16/509 ,  H01J37/32724 ,  H01L21/0332 ,  H01L21/6833 ,  H01J37/32082 ,  H01L21/31105

Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about −10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.