公开(公告)号：US09871124B2

公开(公告)日：2018-01-16

申请号：US15412519

申请日：2017-01-23

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Soo Young Choi ,  Dong-Kil Yim ,  Yan Ye

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L29/78606 ,  H01L29/7869

Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.

公开(公告)号：US09245809B2

公开(公告)日：2016-01-26

申请号：US14199318

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Dong-Kil Yim ,  Tae Kyung Won ,  Seon-Mee Cho

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/24

Abstract: The present invention generally relates to methods measuring pinhole determination. In one aspect, a method of measuring pinholes in a stack, such as a TFT stack, is provided. The method can include forming an active layer on a deposition surface of a substrate, forming a dielectric layer over the active layer, delivering an etchant to at least the dielectric layer, to etch both the dielectric layer and any pinholes formed therein and optically measuring the pinhole density of the etched dielectric layer using the active layer.

Abstract translation: 本发明一般涉及测量针孔确定的方法。 一方面，提供了一种测量堆叠中的针孔的方法，例如TFT堆叠。 该方法可以包括在衬底的沉积表面上形成有源层，在有源层上形成电介质层，向至少介电层递送蚀刻剂，以蚀刻电介质层和在其中形成的任何针孔，并光学测量 使用有源层的蚀刻介电层的针孔密度。