公开(公告)号：US20230187204A1

公开(公告)日：2023-06-15

申请号：US17844189

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Xiaodong Wang ,  Kevin Kashefi ,  Rongjun Wang ,  Shi You ,  Keith T. Wong ,  Yuchen Liu ,  Ya-Hsi Hwang ,  Jean Lu

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0234 ,  H01L21/28568

Abstract: Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.

公开(公告)号：US20190393029A1

公开(公告)日：2019-12-26

申请号：US16434507

申请日：2019-06-07

Applicant: Applied Materials, Inc.

Inventor： Golnaz Karbasian ,  Keith T. Wong

IPC: H01L21/02

Abstract: Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.