公开(公告)号：US20200227265A1

公开(公告)日：2020-07-16

申请号：US16836858

申请日：2020-03-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.