公开(公告)号：US12057299B2

公开(公告)日：2024-08-06

申请号：US17486210

申请日：2021-09-27

Applicant: Applied Materials, Inc.

Inventor： Tuck Foong Koh ,  John Leonard Sudijono

IPC: H01L21/3065 ,  C23C2/02 ,  C23C14/02 ,  C23C14/12 ,  C23C14/54 ,  H01J37/32

CPC classification number: H01J37/32816 ,  C23C2/024 ,  C23C14/021 ,  C23C14/12 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335

Abstract: A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.

公开(公告)号：US11375584B2

公开(公告)日：2022-06-28

申请号：US16545901

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Tuck Foong Koh ,  Yueh Sheng Ow ,  Nuno Yen-Chu Chen ,  Ananthkrishna Jupudi ,  Preetham P. Rao

IPC: H05B1/02 ,  H05B6/80

Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.

公开(公告)号：US09818624B2

公开(公告)日：2017-11-14

申请号：US15142220

申请日：2016-04-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Jen Sern Lew ,  Tuck Foong Koh ,  Sriskantharajah Thirunavukarasu ,  Karthik Elumalai ,  Eng Sheng Peh ,  Jun-Liang Su

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/324 ,  H01L21/67 ,  F27B9/02 ,  F27B9/10

CPC classification number: H01L21/3247 ,  F27B9/02 ,  F27B9/10 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67288

Abstract: Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.