公开(公告)号：US10861575B2

公开(公告)日：2020-12-08

申请号：US16666164

申请日：2019-10-28

Applicant: Arm Limited

Inventor： Rajiv Kumar Sisodia ,  Renu Rawat ,  Paul Darren Hoxey ,  Vikash ,  Kumaraswamy Ramanathan ,  Sanjay Mangal ,  Yew Keong Chong

IPC: G11C29/12 ,  G11C11/418 ,  G11C11/419 ,  G11C7/10 ,  G11C29/32 ,  G11C5/06

Abstract: A circuit includes a bitcell array having a plurality of bitlines, and an I/O functional unit to read data stored in the bitcell array. The I/O functional unit includes a first multiplexer to select a first input port or a first bitline among a first group of bitlines, a first latch to latch the output of the first multiplexer, a second multiplexer to select a second input port or a second bitline among a second group of bitlines. The second input port is coupled to an output port of the first latch. The I/O functional unit further includes a second latch to latch the output of the second multiplexer.

公开(公告)号：US20200286888A1

公开(公告)日：2020-09-10

申请号：US16882634

申请日：2020-05-25

Applicant: Arm Limited

Inventor： Yew Keong Chong ,  Sriram Thyagarajan ,  Kumaraswamy Ramanathan ,  Damayanti Datta

IPC: H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  G11C11/40 ,  H03K3/012

Abstract: Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.