METHODS AND SYSTEMS FOR DETERMINING A DEFECT CRITICALITY INDEX FOR DEFECTS ON WAFERS
    16.
    发明申请
    METHODS AND SYSTEMS FOR DETERMINING A DEFECT CRITICALITY INDEX FOR DEFECTS ON WAFERS 有权
    用于确定缺陷关键指标的方法和系统

    公开(公告)号:US20090257645A1

    公开(公告)日:2009-10-15

    申请号:US12102343

    申请日:2008-04-14

    IPC分类号: G06K9/00

    摘要: Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.

    摘要翻译: 提供了用于确定晶片缺陷的缺陷关键指数(DCI)的各种方法和系统。 一种计算机实现的方法包括:基于由检查系统报告的缺陷的位置以及由检测系统报告的缺陷的大小,通过检查系统确定围绕在晶片上检测到的缺陷的晶片的一部分设计的临界区域信息 检查系统。 该方法还包括基于关键区域信息,缺陷相对于关键区域信息的位置以及报告的缺陷大小来确定缺陷的DCI。