摘要:
Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.
摘要:
Methods and systems for generating information to be used for selecting values for parameter(s) of a detection algorithm are provided. One method includes without user intervention performing a scan of an area of a wafer using an inspection system and default values for parameter(s) of a detection algorithm to detect defects on the wafer. The method also includes selecting a portion of the defects from results of the scan based on a predetermined maximum number of total defects to be used for selecting values for the parameter(s) of the detection algorithm. The method further includes storing information, which includes values for the parameter(s) of the detection algorithm determined for the defects in the portion. The information can be used to select the values for the parameter(s) of the detection algorithm to be used for the inspection recipe without performing an additional scan of the wafer subsequent to the scan.
摘要:
Methods and systems for generating information to be used for selecting values for parameter(s) of a detection algorithm are provided. One method includes without user intervention performing a scan of an area of a wafer using an inspection system and default values for parameter(s) of a detection algorithm to detect defects on the wafer. The method also includes selecting a portion of the defects from results of the scan based on a predetermined maximum number of total defects to be used for selecting values for the parameter(s) of the detection algorithm. The method further includes storing information, which includes values for the parameter(s) of the detection algorithm determined for the defects in the portion. The information can be used to select the values for the parameter(s) of the detection algorithm to be used for the inspection recipe without performing an additional scan of the wafer subsequent to the scan.
摘要:
Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.