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公开(公告)号:US20180197761A1
公开(公告)日:2018-07-12
申请号:US15866209
申请日:2018-01-09
Applicant: Axcelis Technologies, Inc.
Inventor: Joseph Ferrara , Brian Terry , John Baggett
IPC: H01L21/67 , C23C14/48 , H01L21/683 , H01L21/687 , C23C14/56 , H01J37/317
CPC classification number: H01L21/67248 , C23C14/48 , C23C14/56 , H01J37/3171 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/67213 , H01L21/6833 , H01L21/68728
Abstract: A heated chuck for an ion implantation system selectively clamps a workpiece to a carrier plate having heaters to selectively heat a clamping surface. A gap between a base plate and carrier plate of the heated chuck contains a heat transfer media. A cooling fluid source is coupled to cooling channels in the base plate. A controller operates the heated chuck in a first mode and second mode. In the first mode, the controller does not activate the heaters and flows the cooling fluid through the cooling channel, where heat is transferred through the heat transfer media and to the cooling fluid. In the second mode, the controller activates the heaters and optionally purges the cooling fluid from the cooling channel or otherwise alters its cooling capacity. A gas can be selectively provided in the gap to further control heat transfer in the first and second modes.
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公开(公告)号:US20180094921A1
公开(公告)日:2018-04-05
申请号:US15281757
申请日:2016-09-30
Applicant: Axcelis Technologies, Inc.
Inventor: John F. Baggett , Joseph Ferrara
CPC classification number: G01B11/272 , G01N21/59 , G01N21/84 , G01N21/9505 , G01N2021/8416 , H01L21/67242 , H01L21/681
Abstract: A workpiece alignment system has a workpiece support to support a workpiece. A first light emitter directs a first light beam toward the workpiece. A first light receiver receives the first light beam. A rotation device rotates the workpiece support about a support axis. A second light emitter directs a second light beam toward a peripheral region of the workpiece. A second light receiver receives the second light beam concurrent with the rotation of the workpiece. A controller determines a transmissivity of the workpiece based on a total initial emittance of the first light beam a transmission of the first light beam through the workpiece. The controller determines a position of the workpiece with respect to the support axis based, at least in part, on a rotational position of the workpiece, a portion of the second light beam received, and the determined transmissivity.
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公开(公告)号:US09607803B2
公开(公告)日:2017-03-28
申请号:US14817893
申请日:2015-08-04
Applicant: Axcelis Technologies, Inc.
Inventor: Armin Huseinovic , Joseph Ferrara , Brian Terry
IPC: H01J37/00 , H01J37/20 , H01J37/317 , H01J37/18 , H01L21/683
CPC classification number: H01J37/20 , H01J37/185 , H01J37/3171 , H01J2237/184 , H01J2237/2001 , H01J2237/31705 , H01L21/26593 , H01L21/67109 , H01L21/67213 , H01L21/6831
Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.
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