Substrate support having customizable and replaceable features for enhanced backside contamination performance

    公开(公告)号:US11114330B2

    公开(公告)日:2021-09-07

    申请号:US16549239

    申请日:2019-08-23

    Abstract: A workpiece support has a support surface where one or more standoffs are selectively removably coupled to the support surface. The one or more standoffs are operable to support a workpiece at a predetermined standoff distance from the support surface. A gap may be defined between the support surface and the workpiece. The one or more standoffs may be an electrically insulative film, such as a polyimide film that is selectively removably coupled to the support surface by an adhesive. The workpiece support may be an electrostatic chuck (ESC). Electrodes positioned below the support surface may electrostatically attract the workpiece toward the support, where a gas may be introduced in the gap.

    ACTIVE WORKPIECE HEATING OR COOLING FOR AN ION IMPLANTATION SYSTEM

    公开(公告)号:US20210366746A1

    公开(公告)日:2021-11-25

    申请号:US17393737

    申请日:2021-08-04

    Abstract: A heated chuck for an ion implantation system selectively clamps a workpiece to a carrier plate having heaters to selectively heat a clamping surface. A gap between a base plate and carrier plate of the heated chuck contains a heat transfer media. A cooling fluid source is coupled to cooling channels in the base plate. A controller operates the heated chuck in a first mode and second mode. In the first mode, the controller does not activate the heaters and flows the cooling fluid through the cooling channel, where heat is transferred through the heat transfer media and to the cooling fluid. In the second mode, the controller activates the heaters and optionally purges the cooling fluid from the cooling channel or otherwise alters its cooling capacity. A gas can be selectively provided in the gap to further control heat transfer in the first and second modes.

    SUBSTRATE SUPPORT HAVING CUSTOMIZABLE AND REPLACEABLE FEATURES FOR ENHANCED BACKSIDE CONTAMINATION PERFORMANCE

    公开(公告)号:US20200066570A1

    公开(公告)日:2020-02-27

    申请号:US16549239

    申请日:2019-08-23

    Abstract: A workpiece support has a support surface where one or more standoffs are selectively removably coupled to the support surface. The one or more standoffs are operable to support a workpiece at a predetermined standoff distance from the support surface. A gap may be defined between the support surface and the workpiece. The one or more standoffs may be an electrically insulative film, such as a polyimide film that is selectively removably coupled to the support surface by an adhesive. The workpiece support may be an electrostatic chuck (ESC). Electrodes positioned below the support surface may electrostatically attract the workpiece toward the support, where a gas may be introduced in the gap.

    Wafer soak temperature readback and control via thermocouple embedded end effector for semiconductor processing equipment

    公开(公告)号:US11011397B2

    公开(公告)日:2021-05-18

    申请号:US16227399

    申请日:2018-12-20

    Inventor: John Baggett

    Abstract: A workpiece processing system and method provides an end effector coupled to a workpiece transfer apparatus. The end effector has support members for selectively contacting and supporting a workpiece. One or more temperature sensors are coupled to the support members and are configured to contact a backside of the workpiece to measure and define one or more measured temperatures of the workpiece. A heated chuck has a support surface at a predetermined temperature, and is configured to radiate heat from the support surface. A controller control the workpiece transfer apparatus to selectively support the workpiece at a predetermined distance from the support surface of the heated chuck to radiatively heat the workpiece, and to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on the one or more measured temperatures.

    Wafer temperature control with consideration to beam power input

    公开(公告)号:US10128084B1

    公开(公告)日:2018-11-13

    申请号:US15707473

    申请日:2017-09-18

    Abstract: A system and method is provided maintaining a temperature of a workpiece during an implantation of ions in an ion implantation system, where the ion implantation system is characterized with a predetermined set of parameters. A heated chuck is provided at a first temperature and heats the workpiece to the first temperature. Ions are implanted into the workpiece concurrent with the heating, and thermal energy is imparted into the workpiece by the ion implantation. A desired temperature of the workpiece is maintained within a desired accuracy during the implantation of ions by selectively heating the workpiece on the heated chuck to a second temperature. The desired temperature is maintained based, at least in part, on the characterization of the ion implantation system. Thermal energy imparted into the workpiece from the implantation is mitigated by the selective heating of the workpiece on the heated chuck at the second temperature.

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