公开(公告)号：US20190180680A1

公开(公告)日：2019-06-13

申请号：US16321968

申请日：2018-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingbo XU ,  Hu MENG

IPC: G09G3/3225 ,  G09G3/36 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

Abstract: Disclosed are a pixel structure, a method for driving a pixel structure, a method for preparing a pixel structure, and a display apparatus. The pixel structure includes a plurality of sub-pixel groups arranged in an array; each of the sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode a first-type carbon nanotube switch tube and a second-type carbon nanotube switch tube; the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube; the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube; and the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each of the sub-pixel groups are connected to the same gate line and the same data line.

公开(公告)号：US20210328163A1

公开(公告)日：2021-10-21

申请号：US17269500

申请日：2020-06-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  PEKING UNIVERSITY

Inventor： Qi HUANG ,  Xuelei LIANG ,  Hu MENG

IPC: H01L51/05 ,  H01L51/00

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

公开(公告)号：US20180204898A1

公开(公告)日：2018-07-19

申请号：US15705538

申请日：2017-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao LI ,  Hu MENG ,  Defeng MAO

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/06 ,  H01L51/05 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L27/3262 ,  B82Y10/00 ,  H01L27/1222 ,  H01L27/3248 ,  H01L27/3274 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78651 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2227/323

Abstract: A thin film transistor, a method for manufacturing the same, an array substrate, and a display device are provided. The thin film transistor includes a substrate; a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode provided on the substrate; wherein the active layer includes a source region, a drain region, and a channel region between the source region and the drain region, the channel region having a bending pattern.

公开(公告)号：US20180108783A1

公开(公告)日：2018-04-19

申请号：US15533128

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu MENG

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12

Abstract: Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for a semiconductor layer: includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer.

公开(公告)号：US20180081188A1

公开(公告)日：2018-03-22

申请号：US15529528

申请日：2016-06-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao LI ,  Hu MENG ,  Hui TIAN ,  Long WANG ,  Chiachiang LIN ,  Chiehhsing CHUNG

IPC: G02B27/22

CPC classification number: G02B27/2242 ,  G02B27/22

Abstract: A three-dimensional display device having an imaging space, wherein an up-conversion material is disposed inside the imaging space, a first light source that emits light toward the imaging space in a first direction, and a second light source that emits light toward the imaging space in a second direction. When the three-dimensional display device is operating, the light from the first light source and the light from the second light source intersect in the imaging space to form a convergence line or light convergence plane, such that the up-conversion material on the convergence line or in the convergence plane is excited to emit light.