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公开(公告)号：US20240355931A1
公开(公告)日：2024-10-24
申请号：US18028182
申请日：2022-05-11
IPC: H01L29/786 , H01L21/449 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66 , H10K85/20
CPC classification number: H01L29/78693 , H01L21/449 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78618 , H10K85/211
Abstract: A thin film transistor includes: a substrate; a gate electrode; an active layer including a first active pattern and a second active pattern, where the first active pattern includes a first active sub-pattern, the first active sub-pattern comprises a first active region and a first source-drain contact region, the first source-drain contact region is connected to the second active pattern through the first active region, the first active pattern includes a material of at least one of a metal oxide semiconductor, low-temperature polycrystalline silicon, and amorphous silicon, and the second active pattern includes a material of a semiconductor carbon nanotube; a source electrode and a drain electrode spaced apart from each other and connected to the active layer; and a passivation layer on a side of the second active pattern distal to the substrate. A method for manufacturing the thin film transistor and a circuit are further provided.
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公开(公告)号：US20210376271A1
公开(公告)日：2021-12-02
申请号：US16315720
申请日：2018-05-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD. , PEKING UNIVERSITY
Inventor： Hu MENG , Xuelei LIANG , Jiye XIA , Qi HUANG
Abstract: A thin film transistor, a manufacturing method thereof, and an electronic device are provided. The thin film transistor comprises a passivation layer disposed on the active layer, wherein a step of forming the passivation layer includes forming an insulating first metal oxide layer, the first metal oxide layer being capable of moving a Fermi level of the active layer to a side of a forbidden band to a valence band.
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3.发明公开公开(公告)号：US20230163059A1
公开(公告)日：2023-05-25
申请号：US17629358
申请日：2021-03-15
Inventor： Hu MENG
IPC: H01L23/498 , H01L21/02 , H01L21/311 , H01L21/288 , H01L21/3205 , H01L21/3213 , H01L21/56
CPC classification number: H01L23/49838 , H01L21/56 , H01L21/0217 , H01L21/288 , H01L21/02164 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/32051 , H01L21/32135
Abstract: A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.
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公开(公告)号：US20230155068A1
公开(公告)日：2023-05-18
申请号：US16957058
申请日：2019-06-25
Inventor： Hu MENG
CPC classification number: H01L33/44 , H01L33/145 , H01L25/167
Abstract: A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.
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5.发明公开公开(公告)号：US20240243141A1
公开(公告)日：2024-07-18
申请号：US18622788
申请日：2024-03-29
Inventor： Hu MENG
IPC: H01L27/146
CPC classification number: H01L27/1461 , H01L27/14636 , H01L27/14692
Abstract: Provided in the present disclosure are a photoelectric detector, a detection substrate and a manufacturing method therefor, and a detection apparatus. The photoelectric detector comprises a first electrode; a semiconductor layer, which is located on one side of the first electrode, wherein a Schottky junction is provided between the semiconductor layer and the first electrode; an intrinsic absorption layer, which is located on the side of the semiconductor layer that is away from the first electrode; and a second electrode, which is arranged opposite the first electrode, wherein the second electrode is arranged adjacent to one of the intrinsic absorption layer and the semiconductor layer.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20230021056A1
公开(公告)日：2023-01-19
申请号：US17762770
申请日：2021-05-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaoyuan ZHANG , Hu MENG
Abstract: A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.
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公开(公告)号：US20210013347A1
公开(公告)日：2021-01-14
申请号：US16976148
申请日：2019-12-16
Inventor： Kui LIANG , Xiaohui LIU , Hu MENG , Dali LIU , Liye DUAN , Chiachiang LIN
IPC: H01L31/0216 , H01L31/0224
Abstract: The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.
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公开(公告)号：US20190280228A1
公开(公告)日：2019-09-12
申请号：US16167204
申请日：2018-10-22
Applicant: BOE Technology Group Co., Ltd.
Inventor： Hu MENG
Abstract: Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.
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公开(公告)号：US20250089581A1
公开(公告)日：2025-03-13
申请号：US18580086
申请日：2022-08-17
Inventor： Hu MENG
IPC: H10N70/00
Abstract: The present disclosure provides a radio frequency switching unit, a method for manufacturing a radio frequency switching unit and an electronic apparatus, and belongs to the field of radio frequency technology. The radio frequency switching unit of the present disclosure includes: a dielectric substrate, and a first electrode, a second electrode, a metal oxide semiconductor layer, and a barrier layer on the dielectric substrate. The metal oxide semiconductor layer and the barrier layer are both between the first electrode and the second electrode, and the barrier layer is closer to a layer where the first electrode is located than the metal oxide semiconductor layer. The metal oxide semiconductor layer is configured to electrically connect the first electrode to the second electrode through the hollowed-out pattern when an operating voltage is applied between the first electrode and the second electrode.
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公开(公告)号：US20220359789A1
公开(公告)日：2022-11-10
申请号：US17620423
申请日：2021-01-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Abstract: An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.
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