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公开(公告)号：US20220262834A1
公开(公告)日：2022-08-18
申请号：US17630651
申请日：2021-03-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fanli MENG , Jiangbo CHEN , Fan LI , Kui LIANG , Da LI , Shuo ZHANG , Zeyuan LI
IPC: H01L27/146 , H04N5/3745
Abstract: The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.
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公开(公告)号：US20220229194A1
公开(公告)日：2022-07-21
申请号：US17488259
申请日：2021-09-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo CHEN , Fanli MENG , Zeyuan LI , Yao LU , Tuo SUN , Yanzhao LI , Ding DING
IPC: G01T1/20 , H04N5/32 , H04N5/378 , H01L27/146
Abstract: The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.
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公开(公告)号：US20210313357A1
公开(公告)日：2021-10-07
申请号：US17204057
申请日：2021-03-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jiangbo CHEN , Fanli MENG , Fan LI , Shuo ZHANG , Da LI , Zeyuan LI , Yanzhao LI
IPC: H01L27/144
Abstract: A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further i a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.
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公开(公告)号：US20200381561A9
公开(公告)日：2020-12-03
申请号：US15999687
申请日：2017-12-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo CHEN , Young Suk SONG , Wei LI , Liangchen YAN
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L27/32
Abstract: Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.
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公开(公告)号：US20170012059A1
公开(公告)日：2017-01-12
申请号：US15121294
申请日：2015-11-17
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Li ZHANG , Liangchen YAN , Jiangbo CHEN
IPC: H01L27/12
CPC classification number: H01L27/124 , G02F1/136286 , H01L27/1262 , H01L27/3279
Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus. The array substrate comprises a gate layer, a gate insulating layer, an active layer, a source and drain layer, a scanning line and a signal line formed on a substrate, the signal line is provided in a same layer as the gate layer, the scanning line is provided in a same layer as the source and drain layer, the gate insulating layer is provided between the gate layer, the signal line and the active layer. The array substrate further comprises a first through hole and a second through hole penetrating through the gate insulating layer, the signal line is connected to the source and drain layer via the first through hole, and the scanning line is connected to the gate layer via the second through hole.
Abstract translation: 本发明提供一种阵列基板及其制造方法以及显示装置。 阵列基板包括形成在基板上的栅极层，栅极绝缘层，有源层，源极和漏极层，扫描线和信号线，信号线设置在与栅极层相同的层中， 扫描线设置在与源极和漏极层相同的层中，栅极绝缘层设置在栅极层，信号线和有源层之间。 阵列基板还包括穿过栅极绝缘层的第一通孔和第二通孔，信号线经由第一通孔连接到源极和漏极层，扫描线经由栅极层经由栅极绝缘层连接到栅极层 第二通孔。
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Patent Agency Ranking
公开(公告)号：US20250085601A1
公开(公告)日：2025-03-13
申请号：US18562474
申请日：2023-02-28
Inventor： Jiangbo CHEN , Yafei ZHANG , Ji PENG , Fanli MENG
Abstract: An electrochromic dimming structure and a transportation apparatus are provided. The electrochromic dimming structure includes a substrate, an electrochromic device and a first protective layer. The electrochromic device includes a first electrode layer, an electrochromic layer and a second electrode layer, the first electrode layer is located between the electrochromic layer and the substrate, the first electrode layer and the second electrode layer are full-layer transparent electrode layers, and at least one of the first electrode layer or the second electrode layer includes an oxide material. The electrochromic device further includes a metal electrode located at at least one of a side of the first electrode layer away from the second electrode layer or a side of the second electrode layer away from the first electrode layer, and the metal electrode is electrically connected with at least one of the first electrode layer or the second electrode layer.
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公开(公告)号：US20240345447A1
公开(公告)日：2024-10-17
申请号：US18682120
申请日：2022-06-30
Inventor： Jiangbo CHEN , Fanli MENG , Zeyuan LI , Qiuyun TAN
CPC classification number: G02F1/155 , G02F1/13324
Abstract: A dimming structure and a dimming device are provided. The dimming structure includes a positive current collector layer, a positive pole, an electrolyte layer, and a negative current collector layer; the positive current collector layer is connected to a first positive pole of a power supply; the positive pole is provided on a side of the positive current collector layer; the electrolyte layer is provided on a side of the positive pole away from the positive current collector layer; the negative current collector layer is provided on a side of the electrolyte layer away from the positive current collector layer and is connected to a first negative pole of the power supply; the positive current collector layer and the negative current collector layer are conductors; the positive current collector layer, the positive pole, the electrolyte layer, and the negative current collector layer are all light-transmissive layers.
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公开(公告)号：US20210315105A1
公开(公告)日：2021-10-07
申请号：US17264957
申请日：2020-05-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fan LI , Jiangbo CHEN
Abstract: The present application provides a method for manufacturing a microelectrode film. The method includes: forming at least one recess on the carrier substrate by isotropic etching; forming a microelectrode seed pattern in the recess; growing a microelectrode in the recess by using the microelectrode seed pattern; making a first substrate to be in contact with a side of the carrier substrate having the recess thereon; separating the microelectrode from the carrier substrate to transfer the microelectrode onto the first substrate.
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19.发明申请公开(公告)号：US20200035834A1
公开(公告)日：2020-01-30
申请号：US16077846
申请日：2018-01-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo CHEN , Young Suk SONG , Hongda SUN , Guoying WANG , Wei LIU
IPC: H01L29/786 , H01L27/12 , H01L21/44 , H01L29/66
Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.
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公开(公告)号：US20190355763A1
公开(公告)日：2019-11-21
申请号：US16476578
申请日：2018-08-27
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jiangbo CHEN , Youngsuk SONG , Wenjun HOU , Lei ZHAO , Guoying WANG
Abstract: Provided are an array substrate, a display panel, a display apparatus and a preparation method therefor. The array substrate comprises: a base substrate; and multiple pixel units arranged on one side of the base substrate, each of the pixel units comprising: a thin-film transistor and an electroluminescent structure, and a shading structure located between the thin-film transistor and the base substrate, wherein the thin-film transistor comprises: an active layer located on one side, away from the base substrate, of the shading structure; the electroluminescent structure comprises: first electrodes for driving the pixel units; and one of the shading structure and the active layer is a same-layer structure fabricated by the same mask plate as the first electrodes so as to reduce the number of mask procedures required in preparation of an array substrate.
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