Abstract:
The present disclosure relates to the field of manufacturing technologies for semiconductor devices and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor includes: an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and including a first via hole; and a drain electrode located on the first insulation layer, where the drain electrode is in contact with the active layer via the first via hole.
Abstract:
A portable display device includes a display element provided with a main screen thereon, the portable display device further includes a secondary screen capable of being incorporated with the main screen. By providing a secondary screen, a display region of the portable display device can be extended as required, thereby allowing to run more applications to satisfy user's demands. And at the same time, the drawing structure can extend the display region in a convenient and steady manner.
Abstract:
A method for manufacturing an array substrate and a method for forming a through hole are provided. The method for manufacturing the array substrate comprise: coating photoresist in an insulating layer through-hole region on a substrate; depositing an insulating layer on the substrate provided with the photoresist in the insulating layer through-hole region; and stripping off the photoresist in the insulating layer through-hole region to form an insulating layer through hole. The manufacturing method simplifies the process of forming the insulating layer through hole.
Abstract:
The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus. The array substrate comprises a gate layer, a gate insulating layer, an active layer, a source and drain layer, a scanning line and a signal line formed on a substrate, the signal line is provided in a same layer as the gate layer, the scanning line is provided in a same layer as the source and drain layer, the gate insulating layer is provided between the gate layer, the signal line and the active layer. The array substrate further comprises a first through hole and a second through hole penetrating through the gate insulating layer, the signal line is connected to the source and drain layer via the first through hole, and the scanning line is connected to the gate layer via the second through hole.
Abstract:
An array substrate, a manufacture method thereof, and a display device are provided. The array substrate includes a first electrode (12), a second electrode (15); a light-emitting functional layer (13) located between the first electrode (12) and the second electrode (15); and an organic planar layer (14). The first electrode (12) is formed on the organic planar layer (14). The first electrode (12) includes metal electrode or metal alloy electrode. An oxide conductive layer (16) is further formed between the organic planar layer (14) and the first electrode (12).
Abstract:
A thin film transistor, an array substrate and manufacturing method thereof, and a display device are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, and a first gate electrode, the first gate electrode is shaped in a ring. The active layer includes a first portion, a second portion and a third portion for connecting the first portion and the second portion. The first portion and the second portion are disposed horizontally, and connected to the source electrode and the drain electrode, respectively. The third portion is disposed obliquely, and has a channel provided thereon. At least one part of the channel is located on an inner side of the first gate electrode. The thin film transistor can be used in a display device.
Abstract:
A thin film transistor array substrate and a manufacturing method thereof, and a display device comprising the thin film transistor array substrate, including a gate electrode (4) within a gate electrode recess of a first insulating layer (2), so that the gate electrode (4) is surrounded by the first insulating layer (2), the patterned gate electrode (4) has no slope, and the first insulating layer (2) isolates the gate electrode (4) from the outside, which can prevent fracture of the gate insulating layer (5), and further effectively block copper diffusion in the thin film transistor array substrate. Further, the metal blocking layer completely covers an upper surface and/or a lower surface of the composite copper metal or the composite thin film layer including copper metal, which can play a good role in blocking copper diffusion; meanwhile, above all, it is not necessary to etch copper, which reduces cost and improves yield.