Balun assembly, microwave radio frequency device and antenna

    公开(公告)号:US11843154B2

    公开(公告)日:2023-12-12

    申请号:US17309929

    申请日:2020-09-25

    CPC classification number: H01P3/08

    Abstract: A balun assembly is provided. The balun assembly includes a first substrate having first and second surfaces opposite to each other, a first transmission electrode on the first surface of the first substrate, a ground electrode having an opening therein and on a side of the first substrate distal to the first transmission electrode, a first dielectric layer on a side of the ground electrode distal to the first substrate, and second and third transmission electrodes both on a side of the first dielectric layer distal to the ground electrode, the second and third transmission electrodes being spaced apart from each other. Orthographic projections of the first, second and third transmission electrodes on the first substrate intersect with an orthographic projection of the opening on the first substrate at first, second and third intersection points, respectively, and the first intersection point is between the second and third intersection points.

    Phase shifter and phased array antenna

    公开(公告)号:US11929535B2

    公开(公告)日:2024-03-12

    申请号:US17437517

    申请日:2020-11-23

    Inventor: Tienlun Ting

    CPC classification number: H01P1/18 H01Q3/36

    Abstract: A phase shifter includes a substrate, a signal transmission structure disposed on the substrate, and a phase adjustment structure disposed on the substrate. The phase adjustment structure includes a conductive structure, at least one semiconductor structure disposed between the signal transmission structure and the conductive structure, a first insulating layer disposed between the conductive structure and the at least one semiconductor structure, and at least one first bias voltage line electrically connected to the conductive structure. Orthogonal projections, on the substrate, of the signal transmission structure, the conductive structure and the at least one semiconductor structure overlap with one another. An orthogonal projection, on the substrate, of the first insulating layer is located at least in a region in which the orthogonal projections, on the substrate, of the conductive structure and the at least one semiconductor structure overlap.

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