公开(公告)号：US20160372581A1

公开(公告)日：2016-12-22

申请号：US14905086

申请日：2015-09-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD

Inventor： Botao SONG ,  Liang Lin ,  Zhixiang ZOU ,  Yinhu HUANG

IPC: H01L29/66 ,  H01L21/383 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/383 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.

Abstract translation: 公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括源电极，漏电极和有源层; 源电极，漏电极和有源层设置在同一层中，源电极和漏电极通过其各自的侧面分别接合到有源层，源电极和漏电极的材料是金属 并且有源层的材料是与源电极和漏电极的材料相对应的金属氧化物半导体。 利用薄膜晶体管，可以降低程序，从而降低成本。

公开(公告)号：US20160293636A1

公开(公告)日：2016-10-06

申请号：US15072940

申请日：2016-03-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhixiang ZOU ,  Binbin CAO ,  Yinhu HUANG

IPC: H01L27/12 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L21/0217 ,  H01L21/02315 ,  H01L21/321 ,  H01L27/1222 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A thin film transistor and a fabrication method thereof, an array substrate, and a display device are provided. The fabrication method comprises: forming a gate line on a base substrate; performing a treatment for alleviating a bulge of the gate line on the base substrate with the gate line formed thereon, and forming a gate insulating layer on the base substrate after the treatment. Thereby, a problem of bulge of the gate line occurring in a fabrication process of the thin film transistor can be alleviated or even avoided, so that resistance of the gate line is uniform, which further renders uniform display of the display device, and improves display quality of the display device.

Abstract translation: 提供薄膜晶体管及其制造方法，阵列基板和显示装置。 制造方法包括：在基底基板上形成栅极线; 进行处理以减轻其上形成有栅极线的基底基板上的栅极线的凸起，以及在处理后在基底基板上形成栅极绝缘层。 由此，可以减轻或者避免在薄膜晶体管的制造工艺中产生的栅极线的凸起的问题，使得栅极线的电阻是均匀的，这进一步使得显示装置的显示均匀，并且改善显示 显示设备的质量。