公开(公告)号：US20070002222A1

公开(公告)日：2007-01-04

申请号：US11293503

申请日：2005-12-05

申请人： Byoung Lim ,  Byeong Choi ,  Hae Yun ,  Woong Kim

发明人： Byoung Lim ,  Byeong Choi ,  Hae Yun ,  Woong Kim

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/136227 ,  G02F2201/50

摘要： A method for manufacturing a transflective LCD includes forming a gate line and a gate pad extending from the gate line on a substrate, forming an gate insulation layer over an entire surface of the substrate, forming a data line and a data pad extending from the data line, the data line crossing the gate line to define a unit pixel, forming a thin film transistor at the crossing of the gate line and the data line, forming a passivation layer over an entire surface of the substrate including the thin film transistor, patterning the passivation layer to form a plurality of contact holes each exposing a corresponding drain electrode, the gate pad, and the data pad of the thin film transistor, forming a transmissive electrode at a transmissive portion in the unit pixel region on the passivation layer, forming a reflective electrode at a reflective portion in the unit pixel region on the passivation layer, and forming an oxidation prevention layer including a transparent conductive film and a metal layer, wherein the oxidation prevention layer contacts the gate pad and the data pad through the contact hole.

摘要翻译： 半透射型LCD的制造方法包括在基板上形成从栅极线延伸的栅极线和栅极焊盘，在基板的整个表面上形成栅极绝缘层，形成数据线和从数据延伸的数据焊盘 线，数据线穿过栅极线以限定单位像素，在栅极线和数据线的交叉处形成薄膜晶体管，在包括薄膜晶体管的衬底的整个表面上形成钝化层，图案化 钝化层以形成多个接触孔，每个接触孔暴露相应的漏电极，栅极焊盘和薄膜晶体管的数据焊盘，在钝化层上的单位像素区域的透射部分处形成透射电极，形成 在钝化层上的单位像素区域的反射部分处的反射电极，以及形成包括透明导电膜a的氧化防止层 d金属层，其中所述防氧化层通过所述接触孔接触所述栅极焊盘和所述数据焊盘。

公开(公告)号：US20060146216A1

公开(公告)日：2006-07-06

申请号：US11167097

申请日：2005-06-28

申请人： Byung Ahn ,  Byoung Lim ,  Jae Ahn

发明人： Byung Ahn ,  Byoung Lim ,  Jae Ahn

IPC分类号： G02F1/136

CPC分类号： G02F1/136227 ,  G02F2001/136231 ,  H01L27/124 ,  H01L27/1288

摘要： A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. A liquid crystal display device comprising first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a pixel hole in the pixel area; a pixel electrode formed of a transparent conductive layer on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive layer.

公开(公告)号：US20060146213A1

公开(公告)日：2006-07-06

申请号：US11168554

申请日：2005-06-29

申请人： Byung Ahn ,  Byoung Lim ,  Jae Ahn

发明人： Byung Ahn ,  Byoung Lim ,  Jae Ahn

IPC分类号： G02F1/136

CPC分类号： G02F1/134363 ,  G02F1/1368 ,  G02F2001/136231

摘要： A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line defining a pixel area with a gate insulating film therebetween; a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer with a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extending from the common line into the pixel area; and a pixel electrode on the gate insulating film in the pixel area, wherein the drain electrode overlaps with the pixel electrode to connect to the pixel electrode; and wherein the semiconductor layer is removed from an area where it overlaps a transparent conductive film.

摘要翻译： 一种液晶显示装置，包括：第一和第二基板; 第一基板上的栅极线; 与栅极线交叉的数据线，其限定了其间具有栅极绝缘膜的像素区域; 包括栅电极，源极，漏电极和半导体层的薄膜晶体管，在源电极和漏电极之间具有沟道; 与第一衬底上的栅极线并联的公共线; 从公共线延伸到像素区域中的公共电极; 以及像素区域中的栅极绝缘膜上的像素电极，其中所述漏电极与所述像素电极重叠以连接到所述像素电极; 并且其中半导体层从与透明导电膜重叠的区域去除。

公开(公告)号：US20050077516A1

公开(公告)日：2005-04-14

申请号：US10958260

申请日：2004-10-06

申请人： Byoung Lim ,  Hyun Seo ,  Heung Cho ,  Hong Kim

发明人： Byoung Lim ,  Hyun Seo ,  Heung Cho ,  Hong Kim

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L27/1288 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66742

摘要： A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.

摘要翻译： 薄膜晶体管阵列基板装置包括形成在基板上的栅极线，与栅极线交叉的数据线与栅极绝缘图案位置之间，栅极线与数据线交叉的薄膜晶体管，像素电极 形成在由栅极线和数据线的交叉限定并连接到薄膜晶体管的像素区域处，具有连接到栅极线的下部栅极焊盘电极的栅极焊盘部分和连接到栅极线的下部栅极焊盘电极 栅极焊盘电极，具有连接到日期线的下部数据焊盘电极的数据焊盘部分和连接到下部数据焊盘电极的上部数据焊盘电极，以及形成在除了像素电极之外的区域处的钝化膜图案， 上部数据焊盘电极和上部栅极焊盘电极，其中像素电极形成在由钝化膜图案曝光的像素区域的栅极绝缘图案上。