公开(公告)号：US20120049151A1

公开(公告)日：2012-03-01

申请号：US12871604

申请日：2010-08-30

申请人： JIANPING ZHANG ,  CHUNHUI YAN

发明人： JIANPING ZHANG ,  CHUNHUI YAN

IPC分类号： H01L33/06 ,  H01L21/18

CPC分类号： H01L33/007 ,  H01L33/08 ,  H01L33/22

摘要： The present invention discloses a light-emitting device with a two-dimensional composition-fluctuation active-region obtained via two-dimensional thermal conductivity modulation of the material lying below the active-region. The thermal conductivity modulation is achieved via formation of high-density pores in the material below the active-region. The fabrication method of the light-emitting device and material with the high-density pores are also disclosed.

摘要翻译： 本发明公开了一种具有二维组成波动活性区域的发光装置，其通过二维热导率调制而获得，该调制方式位于有源区下方。 通过在活性区域下方的材料中形成高密度孔来实现热导率调节。 还公开了发光器件的制造方法和具有高密度孔的材料。

公开(公告)号：US20100187496A1

公开(公告)日：2010-07-29

申请号：US12693408

申请日：2010-01-25

申请人： CHUNHUI YAN

发明人： CHUNHUI YAN

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  Y10S438/938

摘要： A strain balanced active-region design is disclosed for optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs) for better device performance. Lying below the active-region, a lattice-constant tailored strain-balancing layer provides lattice template for the active-region, enabling balanced strain within the active-region for the purposes of 1) growing thick, multiple-layer active-region with reduced defects, or 2) engineering polarization fields within the active-region for enhanced performance. The strain-balancing layer in general enlarges active-region design and growth windows. In some embodiments of the present invention, the strain-balancing layer is made of quaternary InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), whose lattice-constant is tailored to exert opposite strains in adjoining layers within the active-region. A relaxation-enhancement layer can be provided beneath the strain-balancing layer for enhancing the relaxation of the strain-balancing layer.

摘要翻译： 公开了用于诸如发光二极管（LED）和激光二极管（LD）的光电子器件的应变平衡有源区设计，以获得更好的器件性能。 在活性区域之下，晶格常数量身定制的应变平衡层为活性区域提供晶格模板，使活性区域内的平衡应变达到目的1）生长厚的多层活性区域，减少 缺陷，或2）在活动区域​​内设计极化场，以提高性能。 应变平衡层通常扩大了主动区域设计和增长窗口。 在本发明的一些实施例中，应变平衡层由其晶格常数被定制以施加的四元In x Al y Ga 1-x-y N（0＆lt; n 1; x＆n 1; 1，x 1和y 1; 在活性区域内相邻层的相反应变。 可以在应变平衡层的下方设置松弛增强层，以增强应变平衡层的松弛。