摘要:
A light-emitting device includes a transparent substrate with a light emitting structure formed on one side of the substrate and a transparent layer formed on the opposing side of the substrate. The refractive index of the transparent layer is greater than the refractive index of the substrate. A light-emitting device includes a package cup having a reflective sidewall and a light emission surface and a light emitting diode (LED) embedded in the package cup. The LED comprises a transparent substrate and a transparent layer formed on the substrate. The reflective sidewall has a first portion in a central area of the package cup and a second portion in a peripheral area of the package cup, the first portion reflects light emitted from the transparent layer to the second portion and, then, the second portion further reflects the light received from the first portion to the light emission surface of the package cup.
摘要:
A three-dimensional LED structure with vertically displaced active-region includes at least two groups of vertically displaced surfaces on a non-planar substrate. The first group of surfaces are separated from the second group of surfaces by a vertical distance in the growth direction of the LED structure. The first group of surfaces are connected to the second group of surfaces by sidewalls, respectively. The sidewalls can be inclined or vertical and have a sufficient height so that a layer such as an n-type layer, an active-region, or a p-type layer in a first LED structure deposited on the first group of surfaces and a corresponding layer such as an n-type layer, an active-region, or a p-type layer in a second LED structure deposited on the second group of surfaces are separated by the sidewalls. The two groups of surfaces may be vertically displaced from each other in certain areas of an LED chip, while merge into an integral surface in other areas. A method for fabricating the three-dimensional LED structure is also provided.
摘要:
A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units.
摘要:
A nitride light emitting device comprises a current blocking Schottky junction zone formed below the p-electrode and above the active region so that current injection from the p-electrode to the area of the active region that is vertically shaded by the p-electrode is blocked by the Schottky junction zone. A method for fabricating the same is also provided.
摘要:
A strain balanced active-region design is disclosed for optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs) for better device performance. Lying below the active-region, a lattice-constant tailored strain-balancing layer provides lattice template for the active-region, enabling balanced strain within the active-region for the purposes of 1) growing thick, multiple-layer active-region with reduced defects, or 2) engineering polarization fields within the active-region for enhanced performance. The strain-balancing layer in general enlarges active-region design and growth windows. In some embodiments of the present invention, the strain-balancing layer is made of quaternary InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), whose lattice-constant is tailored to exert opposite strains in adjoining layers within the active-region. A relaxation-enhancement layer can be provided beneath the strain-balancing layer for enhancing the relaxation of the strain-balancing layer.
摘要翻译:公开了用于诸如发光二极管(LED)和激光二极管(LD)的光电子器件的应变平衡有源区设计,以获得更好的器件性能。 在活性区域之下,晶格常数量身定制的应变平衡层为活性区域提供晶格模板,使活性区域内的平衡应变达到目的1)生长厚的多层活性区域,减少 缺陷,或2)在活动区域内设计极化场,以提高性能。 应变平衡层通常扩大了主动区域设计和增长窗口。 在本发明的一些实施例中,应变平衡层由其晶格常数被定制以施加的四元In x Al y Ga 1-x-y N(0< n 1; x&n 1; 1,x 1和y 1; 在活性区域内相邻层的相反应变。 可以在应变平衡层的下方设置松弛增强层,以增强应变平衡层的松弛。
摘要:
A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.
摘要:
A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units.
摘要:
A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要:
A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.
摘要:
A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.