公开(公告)号：US20130171770A1

公开(公告)日：2013-07-04

申请号：US13728911

申请日：2012-12-27

Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED

Inventor： Jonathan Halls ,  Richard Wilson ,  Jeremy Burroughes

IPC: B05D5/12 ,  H01L31/18

CPC classification number: B05D5/12 ,  B82Y10/00 ,  H01L31/18 ,  H01L51/0003 ,  H01L51/0015 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/50 ,  H01L51/5048 ,  Y02E10/549

Abstract: A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material.

Abstract translation: 提供了一种制造光电子器件的方法，该光电器件包括基片，第一电极层，与所述第一电极层相反极性的第二电极层，任何中间层，以及在所述第一和第二电极层之间的第一功能材料 与第二功能材料的界面接触，其中所述第一功能材料具有横向多孔膜的结构，并且所述第二功能材料是设置在所述第一功能材料的膜上并与所述第一功能材料的膜互穿的膜。

公开(公告)号：US10205108B2

公开(公告)日：2019-02-12

申请号：US15331335

申请日：2016-10-21

Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED

Inventor： Thomas Kugler ,  Tania Zuberi ,  Richard Wilson ,  Jeremy Burroughes

IPC: H01L51/00 ,  C07F7/08 ,  C09K11/06 ,  H05B33/14 ,  C09K11/02 ,  H01L51/50

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

公开(公告)号：US20170141332A1

公开(公告)日：2017-05-18

申请号：US15322402

申请日：2015-06-26

Applicant: Cambridge Display Technology Limited

Inventor： Jeremy Burroughes ,  Christopher Newsome ,  Daniel Tobjork

IPC: H01L51/05 ,  H01L51/10

CPC classification number: H01L51/0562 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0074 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor comprising source and drain electrodes (103, 105); a semiconducting region between the source and drain electrodes; a charge-transporting layer (107) comprising a charge-transporting material extending across the semiconducting region and in electrical contact with the source and drain electrodes; an organic semiconducting layer (109) comprising an organic semiconductor extending across the semiconducting region; a gate electrode (113); and a gate dielectric (111) between the gate electrode and the organic semiconducting layer.

公开(公告)号：US20150041787A1

公开(公告)日：2015-02-12

申请号：US14385486

申请日：2013-03-13

Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED

Inventor： Surama Malik ,  Julian Carter ,  Laurence Scullion ,  Colin Baker ,  Arne Fleissner ,  Jeremy Burroughes

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00 ,  H01L51/44 ,  H01L51/52

CPC classification number: H01L51/5088 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/441 ,  H01L51/445 ,  H01L51/5212 ,  H01L51/5275 ,  H01L51/56 ,  H01L2251/5361 ,  Y02E10/549

Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Abstract translation: 本发明一般涉及一种制造这种器件的光电子器件及其制造方法，尤其涉及一种包括阳极层，设在阳极层上的半导体层和设置在半导体层上的阴极层的光电器件，阳极 层包括连接在一起并且彼此间隔开的多个导电轨道，该装置还包括设置在阳极层和半导体层之间并延伸穿过所述间隙的第一和一个或多个另外的空穴注入层，其中 第一空穴注入层的导电率大于一个或多个其它空穴注入层的导电率。