Abstract:
A method of fabricating a color filter layer is provided. First, an active device array substrate having an opaque metal pattern formed thereon is provided. Next, a back-side exposure process is performed on the active device array substrate using the opaque metal layer as a mask to form a black matrix defining a plurality of pixel regions. Next, a plurality of color filter patterns is formed in the pixel regions.
Abstract:
A pixel unit comprising a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode, a source electrode, and a second electrode. The drain electrode overlaps the gate electrode in a first overlapping region. The source electrode overlaps the gate electrode in a second overlapping region. The second electrode overlaps the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode. The first electrode and the second electrode are staggered.
Abstract:
A method of fabricating a color filter layer is provided. An active device array substrate having an opaque metal pattern formed thereon is provided. A planarization layer covering the opaque metal pattern is formed. A back-side exposure process is performed on the active device array substrate using the opaque metal layer as a mask to form a black matrix thereon, wherein the black matrix defines a plurality of pixel regions. A plurality of color filter patterns is formed in the pixel regions.
Abstract:
A pixel structure disposed on a substrate having a plurality of protrudent patterns is provided. An area where the protrudent patterns are disposed defines a first display area. The arrangement of the protrudent patterns forms a plurality of arc loci. The arc loci have a same arc center disposed at a corner of the first display area. The abovementioned protrudent patterns avails improvement of a displaying effect of the pixel structure.
Abstract:
Lift-off method and half-tone photolithography are used to fabricate LCD TFT array plate. Only two photo masks are used to respectively define a first and a second metal layers to accomplish the LCD TFT array plate.
Abstract:
Lift-off method and half-tone photolithography are used to fabricate LCD TFT array plate. Only two photo masks are used to respectively define a first and a second metal layers to accomplish the LCD TFT array plate.
Abstract:
A method of fabricating a color filter layer is provided. An active device array substrate having an opaque metal pattern formed thereon is provided. A planarization layer covering the opaque metal pattern is formed. A back-side exposure process is performed on the active device array substrate using the opaque metal layer as a mask to form a black matrix thereon, wherein the black matrix defines a plurality of pixel regions. A plurality of color filter patterns is formed in the pixel regions.
Abstract:
A method for manufacturing a substrate for a flat panel display device is disclosed. The present method uses photolithography with four masks to manufacture a TFT-LCD. After the third half-tone mask is used, the manufacturing of the TFTs and the defining of the pixel area of the substrate can be completed. The present method can avoid the alignment deviation and the generation of parasitic capacitance happened on the substrate made through the conventional photolithography with five masks. Therefore, the present method can reduce the costs and increase the yield. Moreover, the substrate for the TFT-LCD made by the present method can define a channel region in the semiconductor layer after the second half-tone mask. Hence, the subsequent manufacturing for forming a transparent conductive layer, a source, and a drain can be achieved by wet etching to effectively reduce the non-homogeneous etching for the channel region in the semiconductor layer.
Abstract:
A mask including a transparent substrate, a semi-transparent layer and a film layer is provided. The transparent substrate at least has a first region, a second region and a third region. The semi-transparent layer covers the second region and the third region of the transparent substrate and exposes the first region. The film layer covers the halftone layer disposed at the third region, to make the transmittance of the third region lower than that of the second region. The halftone layer and the film can be made of phase shift layers, to form a phase shift mask. Besides, several fabrication methods of the mask are also disclosed to form the above-mentioned mask.
Abstract:
A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second region of the transparent substrate. Next, a first transmitting layer is formed on the transparent substrate and the first photoresist layer. Finally, the first photoresist layer is removed. The first transmitting layer on the first photoresist layer is removed at the same time and the first transmitting layer in the second region of the transparent substrate is remained and a third region of the transparent substrate is exposed. A lift-off process is used in the mask manufacturing method of the present invention to form the transmitting layer.