公开(公告)号：US07166522B2

公开(公告)日：2007-01-23

申请号：US10865433

申请日：2004-06-10

申请人： Jin Ping Liu ,  Dong Kyun Sohn ,  Liang Choo Hsia

发明人： Jin Ping Liu ,  Dong Kyun Sohn ,  Liang Choo Hsia

IPC分类号： H01L21/20

CPC分类号： C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/0262 ,  H01L29/1054

摘要： A method of forming a relaxed silicon-germanium layer for use as an underlying layer for a subsequent, overlying tensile strain silicon layer, has been developed. The method features initial growth of a underlying first silicon-germanium layer on a semiconductor substrate, compositionally graded to feature the largest germanium content at the interface of the first silicon-germanium layer and the semiconductor substrate, with the level of germanium decreasing as the growth of the graded first silicon-germanium layer progresses. This growth sequence allows the largest lattice mismatch and greatest level of threading dislocations to be present at the bottom of the graded silicon-germanium layer, with the magnitude of lattice mismatch and threading dislocations decreasing as the growth of the graded silicon-germanium layer progresses. In situ growth of an overlying silicon-germanium layer featuring uniform or non-graded germanium content, results in a relaxed silicon-germanium layer with a minimum of dislocations propagating from the underlying graded silicon-germanium layer. In situ growth of a silicon layer results in a tensile strain, low defect density layer to be used for MOSFET device applications.

摘要翻译： 已经开发了形成用于随后的上覆拉伸应变硅层的下层的松弛硅锗层的方法。 该方法的特征在于半导体衬底上的底层第一硅 - 锗层的初始生长，其组成分级以在第一硅 - 锗层和半导体衬底的界面处具有最大的锗含量，锗的含量随着生长 的分级第一硅锗层进行。 该生长序列允许最大的晶格失配和最高级别的穿透位错存在于渐变硅 - 锗层的底部，随着梯度硅 - 锗层的生长进行，晶格失配和穿透位错的大小减小。 具有均匀或非分级锗含量的上覆硅锗层的原位生长导致松弛的硅 - 锗层，其中最小的位错从下面的梯度硅 - 锗层传播。 硅层的原位生长导致用于MOSFET器件应用的拉伸应变，低缺陷密度层。

公开(公告)号：US08754447B2

公开(公告)日：2014-06-17

申请号：US12857543

申请日：2010-08-16

申请人： Jin Ping Liu ,  Alex K H See ,  Mei Sheng Zhou ,  Liang Choo Hsia

发明人： Jin Ping Liu ,  Alex K H See ,  Mei Sheng Zhou ,  Liang Choo Hsia

IPC分类号： H01L29/78

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/66636

摘要： A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.

摘要翻译： 一种晶体管器件结构，包括：由第一材料形成的衬底部分; 以及源区域，漏极区域和形成在所述衬底中的沟道区域，所述源极和漏极区域包括与所述第一材料不同的多个第二材料岛，所述岛被布置成在所述沟道区域中引起应变 底物。

公开(公告)号：US07064037B2

公开(公告)日：2006-06-20

申请号：US10755501

申请日：2004-01-12

申请人： Jin Ping Liu

发明人： Jin Ping Liu

IPC分类号： H01L21/336 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L29/78 ,  H01L29/1054

摘要： A method of forming a relaxed silicon-germanium layer for accommodation of an overlying silicon layer formed with tensile strain, has been developed. The method features growth of multiple composite layers on a semiconductor substrate, with each composite layer comprised of an underlying silicon-germanium-carbon layer and of an overlying silicon-germanium layer, followed by the growth of an overlying thicker silicon-germanium layer. A hydrogen anneal procedure performed after growth of the multiple composite layers and of the thicker silicon-germanium layer, results in a top composite layer now comprised with an overlying relaxed silicon-germanium layer, exhibiting a low dislocation density. The presence of silicon-carbon micro crystals in each silicon-germanium-carbon layer reduces the formation of, and the propagation of threading dislocations in overlying silicon-germanium layers, therefore also reducing extension of these defects into an overlying silicon layer, wherein the tensile strained silicon layer will be used to accommodate a subsequent device structure.

摘要翻译： 已经开发了形成用于容纳形成有拉伸应变的上覆硅层的松弛硅 - 锗层的方法。 该方法的特征是在半导体衬底上生长多个复合层，其中每个复合层由下面的硅 - 锗 - 碳层和上覆的硅 - 锗层组成，随后生长上覆的较厚的硅 - 锗层。 在多个复合层和更厚的硅 - 锗层的生长之后执行的氢退火程序导致顶层复合层现在包含具有低位错密度的上覆松弛硅 - 锗层。 在每个硅 - 锗 - 碳层中硅 - 碳微晶的存在减少了覆盖硅 - 锗层中穿透位错的形成和扩散，因此也减少了这些缺陷扩展到上覆硅层，其中拉伸 应变硅层将用于适应随后的器件结构。