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11.发明申请公开(公告)号：US20210124234A1
公开(公告)日：2021-04-29
申请号：US17141672
申请日：2021-01-05
Applicant: Ciena Corporation
Inventor： Michael Vitic , Christopher Edgar Falt , Alexandre Delisle-Simard , Michel Poulin
Abstract: Driving an optical modulator is described. A control circuit generates first and second input voltages based on a target phase modulation between first and second optical waveguide arms of the optical modulator. An offset control circuit generates first and second offset signals. A linear modulator driver receives the first and second offset signals, generates a first output voltage for biasing the first optical waveguide arm using the first offset signal, and generates a second output voltage for biasing the second optical waveguide arm using the second offset signal. Feedback circuitry can feed the first and second output voltages to the offset control circuit, which can generate the first and second offset signals using the first and second output voltages. The output voltages bias the waveguide arms so the optical modulator operates close to the target phase modulation, even in the presence of manufacturing errors.
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公开(公告)号：US10908474B2
公开(公告)日：2021-02-02
申请号：US16111423
申请日：2018-08-24
Applicant: Ciena Corporation
Inventor： Michael Vitic , Alexandre Delisle-Simard , Michel Poulin
Abstract: An optical modulator device and method, including and utilizing: a first optical waveguide arm including one or more optical phase shifters, e.g., pn junctions, and configured to receive a first bias voltage Vbias1; and a second optical waveguide arm including one or more optical phase shifters, e.g., pn junctions, and configured to receive a second bias voltage Vbias2; wherein the first bias voltage Vbias1 and the second bias voltage Vbias2 are dissimilar, such that the first optical waveguide arm and the second optical waveguide arm exhibit a same phase modulation. Vbias1 and Vbias2 are selected such that the corresponding slopes Vπ of the associated phase shift versus applied bias voltage curves are equal. The optical modulator device further includes a driver coupled to the first optical waveguide arm and the second optical waveguide arm and including a current offset control circuit operable for providing Vbias1 and Vbias2.
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公开(公告)号：US20210018681A1
公开(公告)日：2021-01-21
申请号：US16511639
申请日：2019-07-15
Applicant: Ciena Corporation
Inventor： Marie-Josee Picard , Alexandre Delisle-Simard
Abstract: A waveguide coupling structure includes: a first section that supports a mode that has an associated first intensity profile that substantially overlaps with an intensity profile associated with a mode supported by a first waveguide portion at a first end of the waveguide coupling structure; a second section that supports a mode that has an associated second intensity profile that substantially overlaps with an intensity profile associated with a mode supported by a second waveguide portion at a second end of the waveguide coupling structure; and a third section, between the first section and the second section, comprising a core structure on a bottom cladding and a supporting structure on the bottom cladding. The supporting structure: (1) overlaps with at least a portion of an intensity profile associated with a guided mode of the third section, and (2) has a shape that is asymmetric with respect to a propagation axis of the guided mode in a plane parallel to a surface of the bottom cladding.
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公开(公告)号：US20180307062A1
公开(公告)日：2018-10-25
申请号：US15836514
申请日：2017-12-08
Applicant: Ciena Corporation
Inventor： Michel Poulin , Yves Painchaud , Alexandre Delisle-Simard
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F1/0121 , G02F1/2255 , G02F1/2257 , G02F2001/0151 , G02F2001/0154 , G02F2001/212
Abstract: An optical modulator circuit includes first and second electrodes, first and second p-n junction segments (PNJSs), and first and second optical waveguides. The first PNJS includes a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD) that are connected to the first and second electrodes, respectively, where the first NMD includes a first substantially larger capacitance than the first MPNJ. The second PNJS includes a second NMD in series with a second MPNJ that are connected to the first and second electrodes, respectively, where the second NMD includes a second substantially larger capacitance than the second MPNJ. The first and second optical waveguides superimpose the first and second MPNJs, respectively, where the first and second MPNJs are configured to modulate a refractive index of the first and second optical waveguides, respectively, based on the substantially larger capacitance of the first NMD and the second NMD.
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公开(公告)号：US20240310688A1
公开(公告)日：2024-09-19
申请号：US18120894
申请日：2023-03-13
Applicant: Ciena Corporation
Inventor： Alexandre Delisle-Simard , Gregory Brookes , Michael Vitic
CPC classification number: G02F1/2255 , G02F1/0157 , G02F1/017 , G02F1/0316 , G02F1/0508 , G02F1/0553 , G02F1/212 , G02F1/2257 , G02F2202/20 , G02F2203/50
Abstract: An optical modulator includes an optical waveguide extending a length; and a plurality of Radio Frequency (RF) electrodes configured to modulate an optical signal in the optical waveguide, wherein the RF electrodes include an RF crossing located an end of the length and that is configured to equalize the optical signal. The optical signal is equalized via destructive interference after the RF crossing for attenuating modulation amplitude. At or near the end of the length, high frequencies of the optical signal are already strongly attenuated whereas low frequencies of the optical signal are not such that the low frequencies are equalized after the RF crossing.
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Patent Agency Ranking
公开(公告)号：US11681168B2
公开(公告)日：2023-06-20
申请号：US17734427
申请日：2022-05-02
Applicant: Ciena Corporation
Inventor： Alexandre Delisle-Simard , Yves Painchaud
CPC classification number: G02F1/025 , G02F1/0156 , G02F2202/06 , G02F2202/105
Abstract: A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide including a contact region and a core region, wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable.
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公开(公告)号：US20230102304A1
公开(公告)日：2023-03-30
申请号：US17959229
申请日：2022-10-03
Applicant: Ciena Corporation
Inventor： Christine Latrasse , Alexandre Delisle-Simard , Michel Poulin , Ian Betty , Arash Khajooeizadeh , Michael Vitic
Abstract: An optical modulator includes a first Radio Frequency (RF) line and a second RF line; an optical waveguide along a length of the modulator with an input and an output; and a plurality of segments along the length including a first set of segments, a single RF line crossing, and a second set of segments, wherein the first set of segments and the second set of segments have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located off center relative to the plurality of segments, wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing.
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公开(公告)号：US20230084020A1
公开(公告)日：2023-03-16
申请号：US17474105
申请日：2021-09-14
Applicant: Ciena Corporation
Inventor： Michel Poulin , Alexandre Delisle-Simard , Michael Vitic
Abstract: A first transmission line comprises a first pair of electrodes receiving an electrical drive comprising first and second drive signals, which are loaded by a first series of p-n junctions applying optical phase modulation to respective optical waves propagating over a first section of the first and second optical waveguide arms of an MZI. A second transmission line comprises a second pair of electrodes configured to receive the electrical drive after an electrical signal delay. The second pair of electrodes are loaded by a second series of p-n junctions applying optical phase modulation to the respective optical waves propagating over a second section of the first and second optical waveguide arms after propagation over the first section. An electrode extension structure provides the electrical drive to the second pair of electrodes, and comprises an unloaded transmission line portion imposing the electrical signal delay based on an optical signal delay.
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公开(公告)号：US11500157B1
公开(公告)日：2022-11-15
申请号：US16824313
申请日：2020-03-19
Applicant: Ciena Corporation
Inventor： Charles Baudot , Alexandre Delisle-Simard , Michel Poulin
Abstract: A method of Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a first region of customized thickness includes with the SOI wafer having a standard thickness, applying a hard mask to a plurality of regions of the SOI wafer including the first region; applying photo-lithography protection to cover the hard mask in all of the plurality of regions except the first region; removing the hard mask in the first region; and performing Silicon SEG in the first region to provide the customized thickness in the first region, wherein the customized thickness is greater than the standard thickness.
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公开(公告)号：US10983369B2
公开(公告)日：2021-04-20
申请号：US16666830
申请日：2019-10-29
Applicant: Ciena Corporation
Inventor： Alexandre Delisle-Simard , Yves Painchaud
Abstract: A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide core that is a PN junction region; a first transition zone that is a P-side region adjacent to the waveguide core and a first electrode; and a second transition zone that is an N-side region adjacent to the waveguide core on an opposite side as the first transition region and a second electrode; wherein a thickness of each of the first transition zone and the second transition zone is variable in any of a lateral direction, a longitudinal direction, and both the lateral direction and the longitudinal direction, each of the lateral direction and the longitudinal direction are relative to the waveguide core.
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