-
公开(公告)号：US11460724B2
公开(公告)日：2022-10-04
申请号：US16944809
申请日：2020-07-31
Applicant: Ciena Corporation
Inventor： Christine Latrasse , Alexandre Delisle-Simard , Michel Poulin , Ian Betty , Arash Khajooeizadeh , Michael Vitic
Abstract: An optical modulator includes multiple segments including modulator segments and a Radio Frequency (RF) crossing segment where RF lines extending a length of the modulator cross one another. The present disclosure includes optimization of one or more of a geometry of the RF crossing and a location of the RF crossing segment along the length. The geometry is selected so that the RF crossing segment appears as another segment having similar characteristics as modulator segments. The location of the RF crossing segment is selected to balance out fabrication error and phase efficiency.
-
公开(公告)号：US20210266066A1
公开(公告)日：2021-08-26
申请号：US17183538
申请日：2021-02-24
Applicant: Ciena Corporation
Inventor： Antoine Bois , Alexandre Delisle-Simard , Marie-Josée Picard , Michel Poulin
IPC: H04B10/079 , G02B6/12
Abstract: A loss-based wavelength meter includes a first photodiode configured to measure power of monochromatic light; and a loss section having a monotonic wavelength dependency, wherein a wavelength of the monochromatic light is determined based on measurements of the first photodiode after the monochromatic light has gone through the loss section. This provides a compact implementation that may be used in integrated optics devices using silicon photonics as well as other embodiments.
-
公开(公告)号：US10197821B2
公开(公告)日：2019-02-05
申请号：US15836514
申请日：2017-12-08
Applicant: Ciena Corporation
Inventor： Michel Poulin , Yves Painchaud , Alexandre Delisle-Simard
Abstract: An optical modulator circuit includes first and second electrodes, first and second p-n junction segments (PNJSs), and first and second optical waveguides. The first PNJS includes a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD) that are connected to the first and second electrodes, respectively, where the first NMD includes a first substantially larger capacitance than the first MPNJ. The second PNJS includes a second NMD in series with a second MPNJ that are connected to the first and second electrodes, respectively, where the second NMD includes a second substantially larger capacitance than the second MPNJ. The first and second optical waveguides superimpose the first and second MPNJs, respectively, where the first and second MPNJs are configured to modulate a refractive index of the first and second optical waveguides, respectively, based on the substantially larger capacitance of the first NMD and the second NMD.
-
公开(公告)号：US11768392B2
公开(公告)日：2023-09-26
申请号：US17959229
申请日：2022-10-03
Applicant: Ciena Corporation
Inventor： Christine Latrasse , Alexandre Delisle-Simard , Michel Poulin , Ian Betty , Arash Khajooeizadeh , Michael Vitic
CPC classification number: G02F1/025 , G02F1/2257 , G02B6/12002 , G02B6/134 , G02B2006/12061 , G02B2006/12142 , G02F1/0152 , G02F1/212
Abstract: An optical modulator includes a first Radio Frequency (RF) line and a second RF line; an optical waveguide along a length of the modulator with an input and an output; and a plurality of segments along the length including a first set of segments, a single RF line crossing, and a second set of segments, wherein the first set of segments and the second set of segments have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located off center relative to the plurality of segments, wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing.
-
5.发明授权公开(公告)号：US11650475B2
公开(公告)日：2023-05-16
申请号：US17141672
申请日：2021-01-05
Applicant: Ciena Corporation
Inventor： Michael Vitic , Christopher Edgar Falt , Alexandre Delisle-Simard , Michel Poulin
CPC classification number: G02F1/2255 , G02F1/025 , G02F1/212
Abstract: Driving an optical modulator is described. A control circuit generates first and second input voltages based on a target phase modulation between first and second optical waveguide arms of the optical modulator. An offset control circuit generates first and second offset signals. A linear modulator driver receives the first and second offset signals, generates a first output voltage for biasing the first optical waveguide arm using the first offset signal, and generates a second output voltage for biasing the second optical waveguide arm using the second offset signal. Feedback circuitry can feed the first and second output voltages to the offset control circuit, which can generate the first and second offset signals using the first and second output voltages. The output voltages bias the waveguide arms so the optical modulator operates close to the target phase modulation, even in the presence of manufacturing errors.
-
Patent Agency Ranking
公开(公告)号：US20220260864A1
公开(公告)日：2022-08-18
申请号：US17734427
申请日：2022-05-02
Applicant: Ciena Corporation
Inventor： Alexandre Delisle-Simard , Yves Painchaud
IPC: G02F1/025
Abstract: A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide including a contact region and a core region, wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable.
-
公开(公告)号：US20210018768A1
公开(公告)日：2021-01-21
申请号：US16516381
申请日：2019-07-19
Applicant: Ciena Corporation
Inventor： Sean Sebastian O'Keefe , Alexandre Delisle-Simard , Yves Painchaud
IPC: G02F1/025
Abstract: The present disclosure provides a multi-pass free-carrier absorption variable optical attenuator device, including: a diode structure including a P-type doped region and an N-type doped region separated by an intrinsic region; and an optical waveguide including a plurality of optical waveguide sections aligned parallel to one another and disposed between the P-type doped region and the N-type doped region and within the intrinsic region of the diode structure. Further, the present disclosure provides a multi-pass thermal phase shifter device, including: a silicon structure including or coupled to one or more heater elements; and an optical waveguide including a plurality of optical waveguide sections aligned parallel to one another and disposed adjacent to the one or more heater elements. Optionally, at least two of the optical waveguide sections have different geometries and are separated by a predetermined gap.
-
8.发明申请公开(公告)号：US20190391006A1
公开(公告)日：2019-12-26
申请号：US16015678
申请日：2018-06-22
Applicant: Ciena Corporation
Inventor： Francois Pelletier , Michel Poulin , Yves Painchaud , Michael Vitic , Christine Latrasse , Alexandre Delisle-Simard
Abstract: A photodetector circuit is disclosed. The photodetector circuit includes an optical input configured to receive a source optical signal for detection by the photodetector circuit, an optical waveguide for coupling the optical input and at least one side of a plurality of sides of a photodiode, wherein the optical waveguide is configured to generate a first optical signal and a second optical signal from the source optical signal, and the photodiode coupled to the first optical waveguide, where the photodiode is illuminated on the at least one side by the first and second optical signals at different locations on the photodiode, where the photodiode generates a photocurrent based on the first and second optical signals reducing photocurrent saturation. Providing a delay between the first and second optical signals reduces an out-of-band frequency response of the photodiode circuit.
-
公开(公告)号：US20230305323A1
公开(公告)日：2023-09-28
申请号：US18323309
申请日：2023-05-24
Applicant: Ciena Corporation
Inventor： Alexandre Delisle-Simard , Yves Painchaud
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2202/06 , G02F2202/105 , G02F1/0156
Abstract: An optical modulator includes a waveguide core; a first transition zone located between a first side of the waveguide core and a first electrical contact region; and a second transition zone located between a second side of the waveguide core and a second electrical contact region, wherein one or more of the first transition zone and second transition zone has a variable thickness. The variable thickness is confined to the one or more of the first transition zone and second transition zone. The variable thickness removes a portion of the highly doped first transition zone and the highly doped second transition zone thereby reducing contact resistance.
-
公开(公告)号：US20220252911A1
公开(公告)日：2022-08-11
申请号：US17570332
申请日：2022-01-06
Applicant: Ciena Corporation
Inventor： Michel Poulin , Alexandre Delisle-Simard , Charles Baudot
Abstract: A carrier depletion-based Silicon Photonic (SiP) modulator using capacitive coupling includes a high-k dielectric material in or on slabs, between a rib. A capacitance (Ck) of the high-k dielectric material is larger than a capacitance (Cpn) of the rib, thereby reducing the high frequency impedance and improving bandwidth of the modulator. A modulator includes a first electrode; a first slab connected to the first electrode at a first end; a rib connected to the first slab at a second end of the first slab; a second slab connected to the rib at a first end; a second electrode connected to the second slab at a second end of the second slab; and a high-k dielectric material disposed in or on a portion of each of the first slab and the second slab, thereby enabling capacitive coupling.
-
-
-
-
-
-
-
-
-
Search Results
28
records
(took 0.017 seconds)
