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公开(公告)号：US20090267120A1
公开(公告)日：2009-10-29
申请号：US12109846
申请日：2008-04-25
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14612
摘要： MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation incident on the pixel. MOS imagers are also described, which may comprise one or more MOS imaging pixels of the type described.
摘要翻译： 描述了MOS成像像素。 MOS成像像素可以包括引导源跟随器，其主体连接到它们的源。 可以使用MOS成像像素的源跟随器来缓冲表示入射在像素上的辐射量的信号。 还描述了MOS成像器，其可以包括所描述类型的一个或多个MOS成像像素。
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公开(公告)号：US20080128849A1
公开(公告)日：2008-06-05
申请号：US11978276
申请日：2007-10-29
IPC分类号： H01L31/0352 , H01L21/331
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流。 （a）未钝化的表面通过至少两个结与光电收集接触分离（b）未钝化的表面被掺杂到非常高的水平，至少等于状态的导带或价带密度 的半导体（c）通过施加电场在未钝化的表面上形成堆积或反转层。 对所有掺杂区域进行电触点，并且施加偏压，使得跨所有接合部保持反向偏压。
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公开(公告)号：US08766393B2
公开(公告)日：2014-07-01
申请号：US13230715
申请日：2011-09-12
IPC分类号： H01L31/00 , H01L31/06 , H01L31/102
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流：（a）未钝化的表面通过至少两个接头与光电收集触点分离; （b）未钝化的表面被掺杂到非常高的水平，至少等于半导体状态的导带或价带密度; （c）通过施加电场在未钝化的表面上形成堆积或反转层。
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14.发明授权Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry 有权图像传感器包括与硅衬底和硅电路集成的孤立的锗光电探测器公开(公告)号：US08664739B2
公开(公告)日：2014-03-04
申请号：US13116411
申请日：2011-05-26
IPC分类号： H01L31/00 , H01L31/06 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14634 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L27/14632 , H01L27/14643 , H01L27/14649 , H01L31/028 , H01L2924/351
摘要： In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.
摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。
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公开(公告)号：US20120025082A1
公开(公告)日：2012-02-02
申请号：US13230715
申请日：2011-09-12
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流：（a）未钝化的表面通过至少两个接头与光电收集触点分离; （b）未钝化的表面被掺杂到非常高的水平，至少等于半导体状态的导带或价带密度; （c）通过施加电场在未钝化的表面上形成堆积或反转层。
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公开(公告)号：US08035186B2
公开(公告)日：2011-10-11
申请号：US11978276
申请日：2007-10-29
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流。 （a）未钝化的表面通过至少两个结与光电收集接触分离（b）未钝化的表面被掺杂到非常高的水平，至少等于状态的导带或价带密度 的半导体（c）通过施加电场在未钝化的表面上形成堆积或反转层。 对所有掺杂区域进行电触点，并且施加偏压，使得跨所有接合部保持反向偏压。
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公开(公告)号：US07288825B2
公开(公告)日：2007-10-30
申请号：US11210223
申请日：2005-08-23
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流。 （a）未钝化的表面通过至少两个结与光电收集接触分离（b）未钝化的表面被掺杂到非常高的水平，至少等于状态的导带或价带密度 的半导体（c）通过施加电场在未钝化的表面上形成堆积或反转层。 对所有掺杂区域进行电触点，并且施加偏压，使得跨所有接合部保持反向偏压。
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18.发明授权Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry 有权图像传感器包括与硅衬底和硅电路集成的孤立的锗光电探测器公开(公告)号：US07973377B2
公开(公告)日：2011-07-05
申请号：US12271601
申请日：2008-11-14
IPC分类号： H01L27/14 , H01L31/00 , H01L31/0232 , H01L29/82 , H01L29/84
CPC分类号： H01L27/14634 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L27/14632 , H01L27/14643 , H01L27/14649 , H01L31/028 , H01L2924/351
摘要： In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.
摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件的阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。
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公开(公告)号：US07589380B2
公开(公告)日：2009-09-15
申请号：US11220942
申请日：2005-09-07
申请人： Conor S. Rafferty , Clifford King
发明人： Conor S. Rafferty , Clifford King
IPC分类号： H01L29/94
CPC分类号： H01L29/78 , H01L21/8221 , H01L27/0688
摘要： A monolithically integrated electronic circuit using two different semiconductor layers which are separated by a dielectric layer. Transistors formed in the upper semiconductor layer are connected to transistors formed in the lower semiconductor layer via conventional wiring. Preferably, one layer of transistors is of one polarity, N-type or P-type, while the second layer of transistors is of the opposite polarity.
摘要翻译： 使用由介电层分离的两个不同半导体层的单片集成电子电路。 形成在上半导体层中的晶体管经由常规布线连接到形成在下半导体层中的晶体管。 优选地，一层晶体管具有一种极性，N型或P型，而第二层晶体管具有相反的极性。
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20.发明授权Semiconductor devices with photoresponsive components and metal silicide light blocking structures 有权具有光响应元件和金属硅化物阻光结构的半导体器件公开(公告)号：US07629661B2
公开(公告)日：2009-12-08
申请号：US11351638
申请日：2006-02-10
申请人： Conor S. Rafferty , Clifford King
发明人： Conor S. Rafferty , Clifford King
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14623 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L27/14685 , H01L31/02164
摘要： In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including at least one photoresponsive component. The metal silicide layer is disposed between the circuit component and the photoresponsive component to prevent entry into the circuit component of light that penetrates the photoresponsive component. The silicide layer advantageously reflects the light back into the photoresponsive element. In addition, the overlying layer can include one or more reflective layers to reduce entry of oblique light into the photoresponsive component. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon. The metal silicide layer can comprise the gate of the IGFET and/or an electrode of the capacitor.
摘要翻译： 根据本发明，光子器件包括半导体衬底，其包括至少一个包括金属硅化物层的电路部件和包括至少一个光响应部件的上覆层。 金属硅化物层设置在电路部件和光响应部件之间，以防止进入穿过光响应部件的光的电路部件。 硅化物层有利地将光反射回光响应元件。 此外，上覆层可以包括一个或多个反射层，以减少斜光进入光响应部件。 在有利的实施例中，衬底包括包括一个或多个绝缘栅场效应晶体管（IGFET）和/或电容器的单晶硅，并且光响应元件包括从硅上的种子外延生长的锗和/或锗合金。 金属硅化物层可以包括IGFET的栅极和/或电容器的电极。
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