HEAT DISSIPATION STRUCTURE FOR ELECTRIC CIRCUIT DEVICE

    公开(公告)号:US20190189534A1

    公开(公告)日:2019-06-20

    申请号:US16322570

    申请日:2017-08-02

    Abstract: Provided is a heat dissipation structure for an electric circuit device excellent in mass-productivity and heat radiation performance. A heat dissipation structure for an electric circuit device, the structure including a layered structure comprising: a heatsink exposed on the electric circuit device; a thermal conductive member; and a cooler, wherein the thermal conductive member is a ceramic-resin composite in which a resin composition is impregnated in a ceramic sintered body, the ceramic sintered body comprising ceramic primary particles integrated into a three-dimensional structure, and wherein the thermal conductive member is arranged such that the thermal conductive member directly contacts with at least one of the heatsink and the cooler.

    BORON NITRIDE/RESIN COMPOSITE CIRCUIT BOARD, AND CIRCUIT BOARD INCLUDING BORON NITRIDE/RESIN COMPOSITE INTEGRATED WITH HEAT RADIATION PLATE
    12.
    发明申请
    BORON NITRIDE/RESIN COMPOSITE CIRCUIT BOARD, AND CIRCUIT BOARD INCLUDING BORON NITRIDE/RESIN COMPOSITE INTEGRATED WITH HEAT RADIATION PLATE 有权
    硼酸盐/树脂复合电路板和电路板,包括氮化硼/树脂复合材料与热辐射板集成

    公开(公告)号:US20160227644A1

    公开(公告)日:2016-08-04

    申请号:US14911707

    申请日:2014-08-12

    Abstract: A boron nitride/resin composite circuit board having high heat dissipation characteristics and high relyability is provided. A boron nitride/resin composite circuit board, including: a plate-shaped resin-impregnated boron nitride sintered body having a plate thickness of 0.2 to 1.5 mm, the plate-shaped resin-impregnated boron nitride sintered body including 30 to 85 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally, the boron nitride particles having an average long diameter of 5 to 50 μm, and 70 to 15 volume % of a resin; and a metal circuit adhered onto both principal planes of the plate-shaped resin-impregnated boron nitride sintered body, the metal circuit being copper or aluminum, wherein: a ratio of a linear thermal expansion coefficient in a plane direction of the resin-impregnated boron nitride sintered body at 40 to 150° C. (CTE1) and a linear thermal expansion coefficient of the metal circuit at 40 to 150° C. (CTE2) (CTE1/CTE2) is 0.5 to 2.0.

    Abstract translation: 提供具有高散热特性和高可靠性的氮化硼/树脂复合电路板。 一种氮化硼/树脂复合电路板,包括:板厚为0.2〜1.5mm的板状树脂浸渍氮化硼烧结体,含有30〜85体积%的板状树脂浸渍氮化硼烧结体 具有三维结合的氮化硼颗粒的氮化硼烧结体,平均长径为5〜50μm的氮化硼颗粒和70〜15体积%的树脂; 以及附着在板状树脂浸渍氮化硼烧结体的两个主平面上的金属电路,金属电路为铜或铝,其中:树脂浸渍硼的平面方向的线性热膨胀系数的比例 40℃〜150℃(CTE1)的金属电路的线性热膨胀系数(CTE2)(CTE1 / CTE2)为40〜150℃。

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