Abstract:
A ceramic circuit board includes a ceramic substrate and metal layers provided to both surfaces of the ceramic substrate and containing Al and/or Cu, wherein a measurement value α1 of a linear thermal expansion coefficient at 25° C. to 150° C. is 5×10−6 to 9×10−6/K, a ratio α1/α2 of the α1 to a theoretical value α2 of the linear thermal expansion coefficient at 25° C. to 150° C. is 0.7 to 0.95, and at least one of the metal layers forms a metal circuit.
Abstract:
A power module includes a base plate, a ceramic insulating substrate bonded on the base plate, and a semiconductor element bonded on the ceramic insulating substrate, wherein a surface of the base plate on a side opposite to the ceramic insulating substrate has a warp with a convex shape, and a linear thermal expansion coefficient α1 (×10−6/K) of the base plate and a linear thermal expansion coefficient α2 (×10−6/K) of the ceramic insulating substrate when a temperature decreases in the range of 25° C. to 150° C. satisfy the following Expression (1). α 1 - α 2 ( α 1 + α 2 ) / 2 × 100 ≤ 10 ( 1 )
Abstract:
[Problem] To inexpensively provide a heat dissipating component that has thermal conductivity, as well as a low specific gravity, and a coefficient of thermal expansion close to that of a ceramic substrate, and furthermore having warpage so as to be able to be joined with good closeness of contact to a heat dissipating component or the like. [Solution] A silicon carbide composite which is a plate-shaped composite formed by impregnation of a porous silicon carbide molded article by a metal having aluminum as a main component, wherein the amount of warpage with respect to 10 cm of length of the main surface of the composite is 250 μm or less, and the amount of warpage of a power module using the plate-shaped composite is 250 μm or less; and a heat dissipating component using the same.
Abstract:
To provide an aluminum-silicon carbide composite which is suitable for use as a power-module base plate. An aluminum-silicon carbide composite wherein a peripheral portion having, as a main component thereof, an aluminum-ceramic fiber composite containing ceramic fibers having an average fiber diameter of at most 20 μm and an average aspect ratio of at least 100, is provided on the periphery of a flat plate-shaped aluminum-silicon carbide composite having a plate thickness of 2 to 6 mm formed by impregnating, with a metal containing aluminum, a porous silicon carbide molded body having a silicon carbide content of 50 to 80 vol %, and wherein the proportion of the aluminum-ceramic fiber composite occupied in the peripheral portion is at least 50 area %.
Abstract:
Provided is a heat dissipation structure for an electric circuit device excellent in mass-productivity and heat radiation performance. A heat dissipation structure for an electric circuit device, the structure including a layered structure comprising: a heatsink exposed on the electric circuit device; a thermal conductive member; and a cooler, wherein the thermal conductive member is a ceramic-resin composite in which a resin composition is impregnated in a ceramic sintered body, the ceramic sintered body comprising ceramic primary particles integrated into a three-dimensional structure, and wherein the thermal conductive member is arranged such that the thermal conductive member directly contacts with at least one of the heatsink and the cooler.
Abstract:
A composite production method includes impregnating a plate-shaped porous inorganic structure and a fibrous inorganic material with a metal while the fibrous inorganic material is arranged to be adjacent to the porous inorganic structure. In the composite structure, first and second phases are adjacent to each other by using a porous inorganic structure having a porous silicon carbide ceramic sintered body and the fibrous inorganic material, the first phase being a phase in which the porous silicon carbide ceramic sintered body is impregnated with the metal, the second phase being a phase in which the fibrous inorganic material is impregnated with the metal, a percentage of the porous silicon carbide ceramic sintered body in the first phase is 50 to 80 volume percent, and a percentage of the fibrous inorganic material in the second phase is 3 to 20 volume percent. A composite is produced by the method.
Abstract:
An aluminum-silicon carbide composite including flat-plate-shaped composited portion containing silicon carbide and an aluminum alloy, and aluminum layers containing an aluminum alloy provided on both plate surfaces of composited portion, wherein circuit board is mounted on one plate surface and the other plate surface is used as heat-dissipating surface, wherein: the heat-dissipating-surface-side plate surface of the composited portion has a convex curved shape; the heat-dissipating-surface-side aluminum layer has a convex curved shape; ratio (Ax/B) between the average (Ax) of the thicknesses at the centers on opposing short sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.91≦Ax/B≦1.00; and a ratio (Ay/B) between the average (Ay) of the thicknesses at the centers on opposing long sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.94≦Ay/B≦1.00 and production method therefor.
Abstract:
A boron nitride/resin composite circuit board having high heat dissipation characteristics and high relyability is provided. A boron nitride/resin composite circuit board, including: a plate-shaped resin-impregnated boron nitride sintered body having a plate thickness of 0.2 to 1.5 mm, the plate-shaped resin-impregnated boron nitride sintered body including 30 to 85 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally, the boron nitride particles having an average long diameter of 5 to 50 μm, and 70 to 15 volume % of a resin; and a metal circuit adhered onto both principal planes of the plate-shaped resin-impregnated boron nitride sintered body, the metal circuit being copper or aluminum, wherein: a ratio of a linear thermal expansion coefficient in a plane direction of the resin-impregnated boron nitride sintered body at 40 to 150° C. (CTE1) and a linear thermal expansion coefficient of the metal circuit at 40 to 150° C. (CTE2) (CTE1/CTE2) is 0.5 to 2.0.