公开(公告)号：US20170278759A1

公开(公告)日：2017-09-28

申请号：US15461784

申请日：2017-03-17

Applicant: DISCO CORPORATION

Inventor： Naoya Sukegawa ,  Seiji Harada

IPC: H01L21/66 ,  G01N22/02 ,  H01L21/322

CPC classification number: H01L22/14 ,  G01N1/00 ,  G01N22/02 ,  G01N2201/00 ,  H01L21/3221 ,  H01L2221/00

Abstract: A workpiece evaluating method evaluates the gettering property of a device wafer having a plurality of devices formed on the front side of the wafer and having a gettering layer formed inside the wafer. The method includes the steps of applying excitation light for exciting a carrier to the wafer, applying microwaves to a light applied area where the excitation light is applied and also to an area other than the light applied area, measuring the intensity of the microwaves reflected from the light applied area and from the area other than the light applied area, subtracting the intensity of the microwaves reflected from the area other than the light applied area from the intensity of the microwaves reflected from the light applied area to thereby obtain a differential signal, and determining the gettering property of the gettering layer according to the intensity of the differential signal obtained above.

公开(公告)号：US20170047221A1

公开(公告)日：2017-02-16

申请号：US15225360

申请日：2016-08-01

Applicant: DISCO CORPORATION

Inventor： Seiji Harada

IPC: H01L21/02 ,  H01L21/683 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L21/02115 ,  H01L21/02274 ,  H01L21/304 ,  H01L21/3221 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Disclosed herein is a wafer processing method for processing the back side of a wafer having a plurality of devices formed on the front side so as to be separated by a plurality of crossing division lines. The wafer processing method includes a back grinding step of grinding the back side of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a back polishing step of polishing the back side of the wafer after performing the back grinding step, thereby removing grinding strain, and a diamond-like carbon film deposition step of forming a diamond-like carbon film on the back side of the wafer after performing the back polishing step.

Abstract translation: 这里公开了一种晶片处理方法，用于处理具有形成在前侧上的多个器件的晶片的背面，以便被多个交叉分割线分开。 晶片处理方法包括：研磨晶片的背面的背面磨削步骤，从而将晶片的厚度减小到预定厚度，在进行后磨削步骤之后抛光晶片背面的背面抛光步骤，从而 去除研磨应变和在进行背面抛光步骤之后在晶片背面形成类金刚石碳膜的类金刚石碳膜沉积步骤。

公开(公告)号：US20150377779A1

公开(公告)日：2015-12-31

申请号：US14752155

申请日：2015-06-26

Applicant: DISCO CORPORATION

Inventor： Naoya Sukegawa ,  Seiji Harada

IPC: G01N21/55 ,  H01L21/66

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G01N2201/06113

Abstract: An evaluation method of a device wafer on which plural devices are formed on a front surface and inside which a gettering layer is formed is provided. In the evaluation method, electromagnetic waves are radiated toward a back surface of the device wafer and excitation light is radiated to generate excess carriers. Furthermore, the gettering capability of the gettering layer formed in the device wafer is determined based on the damping time of reflected electromagnetic waves.

Abstract translation: 提供了在形成有吸气层的正面和内部形成有多个器件的器件晶片的评价方法。 在评价方法中，电磁波朝向装置晶片的背面照射，并且激发光被照射以产生过量的载流子。 此外，基于反射的电磁波的阻尼时间确定在器件晶片中形成的吸杂层的吸杂能力。

公开(公告)号：US20140175070A1

公开(公告)日：2014-06-26

申请号：US14102892

申请日：2013-12-11

Applicant: Disco Corporation

Inventor： Yukinobu Ohura ,  Daigo Shitabo ,  Nobuyasu Kitahara ,  Seiji Harada

IPC: B23K26/18 ,  B23K26/36

CPC classification number: B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50

Abstract: A laser processing method including the steps of covering the back side of a workpiece with fine particles having absorptivity to the wavelength of a laser beam to be applied to the workpiece, thereby forming a fine particle layer on the back side of the workpiece, and next applying the laser beam through the fine particle layer to the back side of the workpiece to thereby perform ablation to the workpiece. The laser beam applied to the workpiece is absorbed by the fine particle layer to thereby suppress the scattering of the energy of the laser beam and the reflection of the laser beam, so that the ablation to the workpiece can be efficiently performed.

Abstract translation: 一种激光加工方法，包括以下步骤：用对具有对待加工的激光束的波长具有吸收性的细小颗粒覆盖工件的背面，从而在工件的背面形成微粒层，接下来， 将激光束通过细颗粒层施加到工件的后侧，从而对工件进行烧蚀。 施加到工件的激光束被微粒层吸收，从而抑制激光束的能量的散射和激光束的反射，从而可以有效地进行对工件的烧蚀。