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11.
公开(公告)号:US11817791B2
公开(公告)日:2023-11-14
申请号:US17490793
申请日:2021-09-30
Inventor: Alberto Iorio , Maurizio Foresta , Emilio Volpi , Jan Novotny
CPC classification number: H02M3/33592 , H02M1/0058 , H02M3/01 , H02M1/08
Abstract: A synchronous rectifier driver circuit is configured to drive a synchronous rectifier FET and includes a first terminal configured to be connected to a source terminal of the synchronous rectifier FET. A second terminal is configured to be connected to a drain terminal of the synchronous rectifier FET, and a third terminal is configured to be connected to a gate terminal of the synchronous rectifier FET. The synchronous rectifier driver circuit is configured to measure the voltage between the second terminal and the first terminal, and detect a switch-on instant in which the measured voltage reaches a first threshold value and a switch-off instant in which the measured voltage reaches a second threshold value. The synchronous rectifier driver circuit generates a drive signal between the third terminal and the first terminal as a function of the measured voltage.
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12.
公开(公告)号:US20170085188A1
公开(公告)日:2017-03-23
申请号:US15066917
申请日:2016-03-10
Applicant: STMicroelectronics S.R.L.
Inventor: Maurizio Foresta , Alberto Iorio
IPC: H02M3/335 , H03K17/687 , H03K17/691 , H03K17/74
CPC classification number: H02M3/33546 , H02M1/08 , H02M3/33592 , H02M3/3378 , H02M2001/0058 , H03K17/063 , Y02B70/1433 , Y02B70/1475 , Y02B70/1491 , Y02P80/112
Abstract: A driver circuit for synchronous rectifier electronic switches, such as SR MOSFETs in resonant converters controls a pair of synchronous rectifier electronic switches to apply thereto a drive voltage to switch the synchronous rectifier electronic switches on and off synchronously with a converter current. The driver circuit includes a programming module to produce a first signal indicative of the figure of merit of the synchronous rectifier electronic switches, and, optionally, a current sensing module to produce a second signal indicative of the output current of the synchronous rectifier electronic switches. An output module is included to generate a value for the drive voltage which is a function of the first signal indicative of the figure of merit and, optionally, of the second signal indicative of the output current of the synchronous rectifier electronic switches.
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13.
公开(公告)号:US20200336071A1
公开(公告)日:2020-10-22
申请号:US16387142
申请日:2019-04-17
Applicant: STMicroelectronics S.r.l.
Inventor: Alberto Iorio , Emilio Volpi , Jeanpierre Vicquery
Abstract: A method of controlling synchronous rectification transistors in a switching converter includes sensing a drain-to-source voltage across each synchronous rectification transistor each switching half-cycle of the switching converter. An average of the sensed drain-to-source voltage is calculated for each synchronous rectification transistor over N prior switching half-cycles. A load current transient in the switching converter is sensed based on the sensed drain-to-source voltage of each synchronous rectification transistor and the calculated average of the sensed drain-to-source voltage for each synchronous rectification transistor over the N prior switching half-cycles.
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公开(公告)号:US09960692B2
公开(公告)日:2018-05-01
申请号:US15282459
申请日:2016-09-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Alberto Iorio , Maurizio Foresta
IPC: H02M3/335 , H02M1/08 , H03K3/012 , H03K17/687 , H02M7/217
CPC classification number: H02M3/33523 , H02M1/08 , H02M3/335 , H02M3/33592 , H03K3/012 , H03K17/163 , H03K17/687
Abstract: A driver includes a high-side driver transistor coupled between supply voltage and the gate drive nodes and provides a first charge current to a high side gate node of the high-side driver transistor until the gate drive node reaches a first gate drive threshold. Then a second charge current is provided to the high side gate node that is less than the first charge current. The gate drive node is limited to a first clamped threshold for a delay time. A gate drive current rise signal sets the value of the second charge current that charges the high side gate node and after the delay time the gate drive voltage is limited to a second clamped threshold greater than the first clamped threshold but less than the supply voltage. A gate drive programmable control signal sets the value of the second clamped threshold.
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15.
公开(公告)号:US10819245B1
公开(公告)日:2020-10-27
申请号:US16387142
申请日:2019-04-17
Applicant: STMicroelectronics S.r.l.
Inventor: Alberto Iorio , Emilio Volpi , Jeanpierre Vicquery
Abstract: A method of controlling synchronous rectification transistors in a switching converter includes sensing a drain-to-source voltage across each synchronous rectification transistor each switching half-cycle of the switching converter. An average of the sensed drain-to-source voltage is calculated for each synchronous rectification transistor over N prior switching half-cycles. A load current transient in the switching converter is sensed based on the sensed drain-to-source voltage of each synchronous rectification transistor and the calculated average of the sensed drain-to-source voltage for each synchronous rectification transistor over the N prior switching half-cycles.
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公开(公告)号:US10224824B2
公开(公告)日:2019-03-05
申请号:US15925456
申请日:2018-03-19
Applicant: STMicroelectronics S.r.l.
Inventor: Alberto Iorio , Maurizio Foresta
Abstract: A driver includes a high-side driver transistor coupled between supply voltage and the gate drive nodes and provides a first charge current to a high side gate node of the high-side driver transistor until the gate drive node reaches a first gate drive threshold. Then a second charge current is provided to the high side gate node that is less than the first charge current. The gate drive node is limited to a first clamped threshold for a delay time. A gate drive current rise signal sets the value of the second charge current that charges the high side gate node and after the delay time the gate drive voltage is limited to a second clamped threshold greater than the first clamped threshold but less than the supply voltage. A gate drive programmable control signal sets the value of the second clamped threshold.
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公开(公告)号:US10277107B1
公开(公告)日:2019-04-30
申请号:US15855277
申请日:2017-12-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Alberto Iorio , Maurizio Foresta
Abstract: Various embodiments provide a resonant converter that includes a synchronous rectifier driver. The synchronous rectifier driver reduces voltage spikes on drains of transistors within the resonant converter by placing an active clamp between the drains of the transistors and an output terminal of the resonant converter. The active clamp reduces the voltage spikes by sinking current at the drains of the transistors to an output capacitor. By sinking the current to the output terminal, power loss is minimized and efficiency of the resonant converter is improved.
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公开(公告)号:US20180097447A1
公开(公告)日:2018-04-05
申请号:US15282459
申请日:2016-09-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Alberto Iorio , Maurizio Foresta
IPC: H02M3/335 , H02M1/08 , H03K3/012 , H03K17/687
CPC classification number: H02M3/33523 , H02M1/08 , H02M3/335 , H02M3/33592 , H03K3/012 , H03K17/163 , H03K17/687
Abstract: A driver includes a high-side driver transistor coupled between supply voltage and the gate drive nodes and provides a first charge current to a high side gate node of the high-side driver transistor until the gate drive node reaches a first gate drive threshold. Then a second charge current is provided to the high side gate node that is less than the first charge current. The gate drive node is limited to a first clamped threshold for a delay time. A gate drive current rise signal sets the value of the second charge current that charges the high side gate node and after the delay time the gate drive voltage is limited to a second clamped threshold greater than the first clamped threshold but less than the supply voltage. A gate drive programmable control signal sets the value of the second clamped threshold.
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19.
公开(公告)号:US20180091052A1
公开(公告)日:2018-03-29
申请号:US15457599
申请日:2017-03-13
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Alberto Iorio , Jeanpierre Vicquery , Emilio Volpi
CPC classification number: H02M3/158 , G01R19/16519 , H02M1/32 , H03K5/2481
Abstract: A voltage comparator for detecting a voltage difference in a high-voltage domain, wherein said comparator receives an input voltage and compares it with a reference voltage also received in input, in which the output voltage from the comparator assumes the logic value 1 if the input voltage is greater than the reference voltage and assumes the logic value 0 if the input voltage is less than or equal to the reference voltage, wherein said comparator comprises low-voltage components and a single high-voltage component. In particular, the low-voltage components are MOS transistors and the high-voltage component is a high-voltage PMOS.
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20.
公开(公告)号:US09929659B2
公开(公告)日:2018-03-27
申请号:US15066917
申请日:2016-03-10
Applicant: STMicroelectronics S.R.L.
Inventor: Maurizio Foresta , Alberto Iorio
CPC classification number: H02M3/33546 , H02M1/08 , H02M3/33592 , H02M3/3378 , H02M2001/0058 , H03K17/063 , Y02B70/1433 , Y02B70/1475 , Y02B70/1491 , Y02P80/112
Abstract: A driver circuit for synchronous rectifier electronic switches, such as SR MOSFETs in resonant converters controls a pair of synchronous rectifier electronic switches to apply thereto a drive voltage to switch the synchronous rectifier electronic switches on and off synchronously with a converter current. The driver circuit includes a programming module to produce a first signal indicative of the figure of merit of the synchronous rectifier electronic switches, and, optionally, a current sensing module to produce a second signal indicative of the output current of the synchronous rectifier electronic switches. An output module is included to generate a value for the drive voltage which is a function of the first signal indicative of the figure of merit and, optionally, of the second signal indicative of the output current of the synchronous rectifier electronic switches.
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