CONTROL METHOD AND SYSTEM FOR PREVENTION OF CURRENT INVERSION IN RECTIFIERS OF SWITCHING CONVERTERS

    公开(公告)号:US20200336071A1

    公开(公告)日:2020-10-22

    申请号:US16387142

    申请日:2019-04-17

    Abstract: A method of controlling synchronous rectification transistors in a switching converter includes sensing a drain-to-source voltage across each synchronous rectification transistor each switching half-cycle of the switching converter. An average of the sensed drain-to-source voltage is calculated for each synchronous rectification transistor over N prior switching half-cycles. A load current transient in the switching converter is sensed based on the sensed drain-to-source voltage of each synchronous rectification transistor and the calculated average of the sensed drain-to-source voltage for each synchronous rectification transistor over the N prior switching half-cycles.

    Control method and system for prevention of current inversion in rectifiers of switching converters

    公开(公告)号:US10819245B1

    公开(公告)日:2020-10-27

    申请号:US16387142

    申请日:2019-04-17

    Abstract: A method of controlling synchronous rectification transistors in a switching converter includes sensing a drain-to-source voltage across each synchronous rectification transistor each switching half-cycle of the switching converter. An average of the sensed drain-to-source voltage is calculated for each synchronous rectification transistor over N prior switching half-cycles. A load current transient in the switching converter is sensed based on the sensed drain-to-source voltage of each synchronous rectification transistor and the calculated average of the sensed drain-to-source voltage for each synchronous rectification transistor over the N prior switching half-cycles.

    Driver for a power field-effect transistor with a programmable drive voltage, and related systems and methods

    公开(公告)号:US10224824B2

    公开(公告)日:2019-03-05

    申请号:US15925456

    申请日:2018-03-19

    Abstract: A driver includes a high-side driver transistor coupled between supply voltage and the gate drive nodes and provides a first charge current to a high side gate node of the high-side driver transistor until the gate drive node reaches a first gate drive threshold. Then a second charge current is provided to the high side gate node that is less than the first charge current. The gate drive node is limited to a first clamped threshold for a delay time. A gate drive current rise signal sets the value of the second charge current that charges the high side gate node and after the delay time the gate drive voltage is limited to a second clamped threshold greater than the first clamped threshold but less than the supply voltage. A gate drive programmable control signal sets the value of the second clamped threshold.

    Synchronous rectifier gate driver with active clamp

    公开(公告)号:US10277107B1

    公开(公告)日:2019-04-30

    申请号:US15855277

    申请日:2017-12-27

    Abstract: Various embodiments provide a resonant converter that includes a synchronous rectifier driver. The synchronous rectifier driver reduces voltage spikes on drains of transistors within the resonant converter by placing an active clamp between the drains of the transistors and an output terminal of the resonant converter. The active clamp reduces the voltage spikes by sinking current at the drains of the transistors to an output capacitor. By sinking the current to the output terminal, power loss is minimized and efficiency of the resonant converter is improved.

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