公开(公告)号：US11174410B2

公开(公告)日：2021-11-16

申请号：US16759236

申请日：2018-11-08

Applicant: Dow Global Technologies LLC

Inventor： Bhawesh Kumar ,  Mark W. Brown, II ,  Rujul M. Mehta

IPC: B29C45/14 ,  C09D123/14 ,  B29C45/00 ,  F16L58/18 ,  B29K23/00 ,  B29K705/00 ,  B29L31/24

Abstract: The present invention relates to a method of coating a pipeline field joint comprising the steps of (a) applying a layer of a coating material composition comprising (i) a propylene polymer and (ii) a substantially linear ethylene copolymer, a linear ethylene copolymer, or mixtures thereof, to the uncoated region of the field joint, preferably the coating is applied by injection molding.

公开(公告)号：US20210277271A1

公开(公告)日：2021-09-09

申请号：US17253009

申请日：2019-05-29

Applicant: Dow Global Technologies LLC

Inventor： Bhawesh Kumar ,  Rujul M. Mehta

IPC: C09D123/16 ,  C09D7/63 ,  F16L59/02

Abstract: A polypropylene/thermoplastic vulcanizate insulative coating is disclosed. The coating is particularly suited for subsea applications, in particular providing insulation to joints in oil well pipes and other machinery. The coating exhibits mechanical properties superior to joint insulation coatings known in the art, especially in combination with other insulation coatings.

公开(公告)号：US10086494B2

公开(公告)日：2018-10-02

申请号：US15264056

申请日：2016-09-13

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Jonathan G. Weis ,  George C. Jacob ,  Bhawesh Kumar ,  Sarah E. Mastroianni ,  Wenjun Xu ,  Nan-Rong Chiou ,  Mohammad T. Islam

IPC: B24B37/24 ,  B24D11/00 ,  B24B37/22 ,  B24B53/017

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

公开(公告)号：US20180071888A1

公开(公告)日：2018-03-15

申请号：US15264056

申请日：2016-09-13

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Jonathan G. Weis ,  George C. Jacob ,  Bhawesh Kumar ,  Sarah E. Mastroianni ,  Wenjun Xu ,  Nan-Rong Chiou ,  Mohammad T. Islam

IPC: B24B37/24 ,  B24B53/017

CPC classification number: B24B37/245 ,  B24B37/22 ,  B24B37/24 ,  B24B53/017 ,  B24D11/00

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.